datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> diode> FR6DR02
PDF
Preview

FR6DR02

Description
Rectifiers 200V 6A REV Leads Fast Recovery
CategoryDiscrete semiconductor    diode   
File Size762KB，4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Download Datasheet Parametric Compare View All

FR6DR02 Online Shopping

Suppliers Part Number Price MOQ In stock  
FR6DR02 - - View Buy Now

FR6DR02 Overview

Rectifiers 200V 6A REV Leads Fast Recovery

FR6DR02 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current135 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage200 V
Maximum reverse current25 µA
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER

Preview

Download Datasheet
FR6A02 thru FR6JR02
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-4 Package
V
RRM
= 50 V - 600 V
I
F
= 6 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤ 100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR6A(R)02 FR6B(R)02 FR6D(R)02 FR6G(R)02 FR6J(R)02 Unit
50
35
50
6
135
-55 to 150
-55 to 150
100
70
100
6
135
-55 to 150
-55 to 150
200
140
200
6
135
-55 to 150
-55 to 150
400
280
400
6
135
-55 to 150
-55 to 150
600
420
600
6
135
-55 to 150
-55 to 150
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 6 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 150 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR6A(R)02 FR6B(R)02 FR6D(R)02 FR6G(R)02 FR6J(R)02 Unit
1.4
25
6
1.4
25
6
1.4
25
6
1.4
25
6
1.4
25
6
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
200
200
200
200
250
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.5
2.5
2.5
2.5
2.5
°C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1

FR6DR02 Related Products

FR6DR02 FR6B02 FR6J02
Description Rectifiers 200V 6A REV Leads Fast Recovery Rectifiers 100V 6A Fast Recovery Rectifiers 600V 6A Fast Recovery
Is it lead-free? Lead free Lead free Lead free
Maker GeneSiC GeneSiC GeneSiC
package instruction O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Reach Compliance Code compliant compliant compliant
application FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ANODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V 1.4 V 1.4 V
JEDEC-95 code DO-203AA DO-203AA DO-203AA
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 135 A 135 A 135 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 6 A 6 A 6 A
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage 200 V 100 V 600 V
Maximum reverse current 25 µA 25 µA 25 µA
Maximum reverse recovery time 0.2 µs 0.2 µs 0.25 µs
surface mount NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER
ECCN code EAR99 - EAR99

Recommended Resources

Household advance working remote control circuit - transmitter circuit

Haofeng NDS-20A oil-filled electric heater circuit diagram

Add LM336 circuit diagram to improve voltage regulation rate

Developer constant temperature control circuit

series resonant circuit

Charging a single 4.2V Li-ion battery using the LTC732 as a controller

Shortcut:   E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components

  1. S3M
  2. 2200DAG3004B3SB
  3. 0805C362M250BT
  4. 7203L42CWCGE22
  5. U19J1WRI32
  6. 2431-89-7
  7. SIT3373AI-1B2-28EX220.123456E
  8. 82A4J-A28-H07/H07
  9. AME8500AEFVBA42
  10. A2006WR-2x17P-BK
  11. A2541WV-S-2x16P-C808-G15
  12. MFR03SF1000A10

Popular Articles

  1. How can electric cars be charged as quickly as refueling?
  2. 51 drive DC motor - PWM speed regulation
  3. ON Semiconductor 8.3-megapixel image sensor
  4. Synopsys Named a Leader in Forrester Wave for Software Composition Analysis
  5. Thermal expansion valve failure phenomenon_difference between internal and external balance of thermal expansion valve
  6. GAC Aion's Liu Taigang: High-voltage fast charging technology may be the mainstream charging technology in the future
  7. CEVA's NeuPro-M heterogeneous security processor architecture
  8. Infineon Technologies expands wireless product portfolio
  9. 51 single chip microcomputer C51 program
  10. 51 MCU Introduction - Basic Knowledge Summary

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 2607  1146  2201  2660  1065  53  24  45  54  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号