March 1998
FDR856P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT
TM
-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as battery powered circuits or
portable electronics where low in-line power loss, fast
switching and resistance to transients are needed.
Features
- 6.3 A, -30 V, R
DS(ON)
=0.025
Ω
@ V
GS
= -10 V
R
DS(ON)
=0.040
Ω
@ V
GS
= -4.5 V.
SuperSOT
TM
-8 package:
small footprint (40% less than SO-8);low profile (1mm
thick);maximum power comperable to SO-8.
High density cell design for extremely low R
DS(ON)
.
SOT-23
SuperSOT -6
TM
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
D
S
S
85
6P
G
5
6
4
3
2
1
pin
1
SuperSOT
TM
-8
D
D
D
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
T
A
= 25
o
C unless other wise noted
FDR856P
-30
±20
(Note 1a)
Units
V
V
A
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
-5.1
-50
1.8
1
0.9
-55 to 150
W
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDR856P Rev.B
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Conditions
V
GS
= 0 V, I
D
= -250 µA
I
D
= -250 µA, Referenced to 25
o
C
V
DS
= -24 V, V
GS
= 0 V
T
J
= 55°C
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note 2)
Min
-30
Typ
Max
Units
V
OFF CHARACTERISTICS
∆
BV
DSS
/
∆
T
J
I
DSS
-15
-1
-10
-100
-100
mV /
o
C
µA
µA
nA
nA
V
GS
= -20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
I
D
= -250 µA, Referenced to 25
o
C
V
GS
= -10 V, I
D
= -6.3 A
T
J
=125°C
V
GS
= -4.5 V, I
D
= -5 A
-1
-1.5
3
0.022
0.03
0.033
-50
15
1370
740
220
V
DS
= -15 V, I
D
= -1 A
V
GS
= -10 V , R
G
= 6
Ω
7
12
80
130
V
DS
= -15 V, I
D
= -6.3 A,
V
GS
= -10 V
22
3.8
8.7
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
-3
V
mV /
o
C
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
0.025
0.042
0.04
Ω
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -6.3 A
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
A
S
pF
pF
pF
14
19
100
160
31
ns
ns
ns
ns
nC
nC
nC
-1.3
A
V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.73
-1.2
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
a. 50
O
C/W on a 0.5 in
2
pad of 2oz copper.
b. 105
O
C/W on a 0.02 in
2
pad of 2oz copper.
c. 125
O
C/W on a 0.003 in
2
pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDR856P Rev.B
Typical Electrical Characteristics
30
- I
D
, DRAIN-SOURCE CURRENT (A)
25
20
15
2.5
V
GS
= -10V
R
DS(on)
, NORMALIZED
-5.5V
-4.5V
-4.0V
-3.5V
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -3.5 V
2
-4.0V
-4.5V
1.5
-5.0V
-5.5V
-7.0V
-3.0V
10
5
0
0
0.5
1
1.5
2
2.5
3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
-10V
-2.5V
0.5
0
5
10
15
20
- I
D
, DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
0.125
I
D
= -6.3A
1.4
V
GS
= -10V
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -3A
0.1
R
DS(ON)
, NORMALIZED
1.2
0.075
1
0.05
T
J
= 125°C
0.025
0.8
T
J
= 25°C
0
2
4
6
8
10
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
Temperature.
with
Figure 4 . On Resistance Variation with
Gate-to-Source Voltage.
-I
S
, REVERSE DRAIN CURRENT (A)
30
40
V
DS
= -5V
- I
D
, DRAIN CURRENT (A)
25
T = -55°C
J
25°C
125°C
V
GS
= 0V
5
1
0.1
0.01
0.001
0.0001
TJ = 125°C
25°C
-55°C
20
15
10
5
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5 . Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage
Variation with Source
Current
and Temperature.
FDR856P Rev.B
Typical Electrical Characteristics
(continued)
-V
GS
, GATE-SOURCE VOLTAGE (V)
10
4000
I
D
= -6.3A
8
V
DS
= -5V
2000
CAPACITANCE (pF)
-15V
6
-10V
C
iss
1000
Coss
4
500
2
200
f = 1 MHz
V
GS
= 0 V
0.3
1
3
7
C
rss
0
0
8
16
24
32
40
100
0.1
15
30
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
50
N)
S(O
RD
IT
LIM
Figure 8. Capacitance Characteristics.
80
-I
D
, DRAIN CURRENT (A)
100
us
1m
s
10
s
POWER (W)
40
5
10m
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
0m
30
0.5
0.05
0.01
0.1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
A
0.2
0.5
1
2
1s
10s
DC
s
20
10
5
10
20
50
0
0.0001
0.001
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.01
0.1
1
SINGLE PULSE TIME (SEC)
10
100 300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 135
°C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/ t
2
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDR856P Rev.B
SuperSOT
TM
-8 Tape and Reel Data and Package Dimensions
SSOT-8 Packaging
Configuration:
Figure 1.0
Customized Label
Packaging Description:
SSOT-8 parts are shipped in tape. The carrier tape is
made from a di ssipat ive (carbo n filled) po ly carbon ate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film ,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped w ith
3,000 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 unit s per 7" or
177cm diameter reel. This and some other options are
further described in the Packagin g Information table.
These full reels are in di vidu ally barcod e labeled and
placed inside a standard intermediate box (ill ustrated in
figure 1.0) made of recyclable corrugated brow n paper.
One box contains two reels maximum. And t hese boxes
are placed ins ide a barcode labeled shipp ing bo x whic h
comes in di fferent sizes depend in g on t he nu mber of parts
shippe d.
F63TNR Label
Anti static Cover Tape
Static Dissi pat ive
Emboss ed Carrier Tape
F852
831N
F852
831N
F852
831N
F852
831N
F852
831N
Pin 1
SSOT-8 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no f l ow c ode )
D84Z
TNR
500
7" Dia
184x187x47
1,000
0.0416
0.0980
TNR
3,000
13" D ia
343x64x343
6,000
0.0416
0.5615
SSOT-8 Unit Orientation
343mm x 342mm x 64mm
Intermediate box for Standar d
and L99Z Opti ons
F63TNR Label
F63TNR
Label
F63TNR Label sa mpl e
184mm x 187mm x 47mm
Pizza Box fo r D84Z Option
F63TNR
Label
LOT: CBVK741B019
FSID: FDR835N
QTY: 3000
SPEC:
SSOT-8 Tape Leader and Trailer
Configuration:
Figur e 2.0
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Traile r Tape
300mm mi nimum or
38 empty pockets
Lead er Tape
500mm mi nimum or
62 empty poc kets
August 1999, Rev. C
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