MWE6IC9100NR1 datasheet, PDF - EEWORLD Datasheet

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MWE6IC9100NR1: DescriptionRF Amplifier 100W 26V GSM; CategoryWireless rf/communication Radio frequency and microwave; File Size1MB，23 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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MWE6IC9100NR1 Overview

RF Amplifier 100W 26V GSM

MWE6IC9100NR1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	NXP
Reach Compliance Code	not_compliant
ECCN code	EAR99
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	31 dB
JESD-609 code	e3
Maximum operating frequency	960 MHz
Minimum operating frequency	869 MHz
RF/Microwave Device Types	NARROW BAND HIGH POWER
Terminal surface	Matte Tin (Sn)
Maximum voltage standing wave ratio	10

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Freescale Semiconductor

Technical Data

Document Number: MWE6IC9100N

Rev. 3, 12/2008

RF LDMOS Wideband Integrated

Power Amplifiers

The MWE6IC9100N wideband integrated circuit is designed with on--chip

matching that makes it usable from 869 to 960 MHz. This multi--stage

structure is rated for 26 to 32 Volt operation and covers all typical cellular base

station modulations.

Final Application

•

Typical GSM Performance: V

= 26 Volts, I

DQ1

= 120 mA, I

DQ2

= 950 mA,

out

= 100 Watts CW, f = 960 MHz

Power Gain — 33.5 dB

Power Added Efficiency — 54%

GSM EDGE Application

•

Typical GSM EDGE Performance: V

= 28 Volts, I

DQ1

= 230 mA, I

DQ2

870 mA, P

out

= 50 Watts Avg., Full Frequency Band (869--960 MHz)

Power Gain — 35.5 dB

Power Added Efficiency — 39%

Spectral Regrowth @ 400 kHz Offset = --63 dBc

Spectral Regrowth @ 600 kHz Offset = --81 dBc

EVM — 2% rms

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness

•

Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 120 W CW

out

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

•

On--Chip Matching (50 Ohm Input, DC Blocked)

•

Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function

(1)

•

Integrated ESD Protection

•

225°C Capable Plastic Package

•

RoHS Compliant

•

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MWE6IC9100NR1

MWE6IC9100GNR1

MWE6IC9100NBR1

960 MHz, 100 W, 26 V

GSM/GSM EDGE

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

CASE 1618-

-02

TO-

-270 WB-

-14

PLASTIC

MWE6IC9100NR1

ARCHIVE INFORMATION

CASE 1621-

-02

TO-

-270 WB-

-14 GULL

PLASTIC

MWE6IC9100GNR1

CASE 1617-

-02

TO-

-272 WB-

-14

PLASTIC

MWE6IC9100NBR1

DS1

out

DS2

GS1

GS2

DS1

Quiescent Current

Temperature Compensation

(1)

DS1

GS1

GS2

DS1

out

DS2

out

DS2

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1977,

Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

and to AN1987,

Quiescent Current Control

for the RF Integrated Circuit Device Family.

Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

RF Device Data

Freescale Semiconductor

ARCHIVE INFORMATION

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