Philips Semiconductors
Product specification
Quad 2-input NAND gate (open drain)
FEATURES
•
5 V tolerant inputs for interfacing with 5 V logic
•
Wide supply voltage range from 1.2 to 3.6 V
•
CMOS low power consumption
•
Direct interface with TTL levels
•
Open-drain outputs
•
Inputs accept voltages up to 5.5 V
•
Complies with JEDEC standard no. 8-1A
•
Specified from
−40
to +85
°C
and
−40
to +125
°C.
DESCRIPTION
74LVC38A
The 74LVC38A is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 or 5 V devices. This
feature allows the use of these devices as translators in a
mixed 3.3 and 5 V environment.
The 74LVC38A provides the 2-input NAND function.
The outputs of the 74LVC38A devices are open drain and
can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH
wired-AND functions.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
2.5 ns.
SYMBOL
t
PZL
t
PLZ
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC
.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
TEMPERATURE RANGE
74LVC38AD
74LVC38ADB
74LVC38APW
74LVC38ABQ
−40
to +125
°C
−40
to +125
°C
−40
to +125
°C
−40
to +125
°C
PINS
14
14
14
14
PACKAGE
SO14
SSOP14
TSSOP14
DHVQFN14
MATERIAL
plastic
plastic
plastic
plastic
CODE
SOT108-1
SOT337-1
SOT402-1
SOT762-1
PARAMETER
propagation delay nA, nB to nY
propagation delay nA, nB to nY
input capacitance
power dissipation capacitance per gate
V
CC
= 3.3 V; notes 1 and 2
CONDITIONS
C
L
= 50 pF; V
CC
= 3.3 V
C
L
= 50 pF; V
CC
= 3.3 V
TYPICAL
1.7
2.3
4.0
5.5
UNIT
ns
ns
pF
pF
2004 Mar 22
2
Philips Semiconductors
Product specification
Quad 2-input NAND gate (open drain)
74LVC38A
handbook, halfpage
handbook, halfpage
1A
1
VCC
14
13
12
4B
4A
4Y
3B
3A
1A
1B
1Y
2A
2B
2Y
GND
1
2
3
4
5
6
7
MNA696
14 VCC
13 4B
12 4A
1B
1Y
2A
2B
2Y
2
3
4
5
6
7
Top view
GND
8
3Y
38
11 4Y
10 3B
9
3A
GND
(1)
11
10
9
8 3Y
MNA977
(1) The die substrate is attached to this pad using conductive die
attach material. It can not be used as a supply pin or input.
Fig.1 Pin configuration SO14 and (T)SSOP14.
Fig.2 Pin configuration (DHVQFN14).
handbook, halfpage
handbook, halfpage
1
2
&
3
1
2
4
5
9
10
12
13
1A
1B
2A
2B
3A
3B
4A
4B
1Y
3
4
&
6
2Y
6
5
9
10
3Y
8
&
8
4Y
11
12
13
&
11
MNA697
MNA698
Fig.3 Logic symbol.
Fig.4 Logic symbol (IEEE/IEC).
2004 Mar 22
4
Philips Semiconductors
Product specification
Quad 2-input NAND gate (open drain)
74LVC38A
handbook, halfpage
Y
A
B
GND
MNA699
Fig.5 Logic diagram (one gate).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
supply voltage
input voltage
output voltage
operating ambient temperature
input rise and fall times
V
CC
= 1.2 to 2.7 V
V
CC
= 2.7 to 3.6 V
CONDITIONS
for maximum speed performance
for low-voltage applications
MIN.
2.7
1.2
0
0
−40
0
0
MAX.
3.6
3.6
5.5
5.5
+125
20
10
V
V
V
V
°C
ns/V
ns/V
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
, I
GND
T
stg
P
tot
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70
°C
derate linearly with 8 mW/K.
For (T)SSOP14 packages: above 60
°C
derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C
derate linearly with 4.5 mW/K.
2004 Mar 22
5
PARAMETER
supply voltage
input diode current
input voltage
output diode current
output voltage
output sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40
to +125
°C;
note 2
V
I
< 0
note 1
V
O
< 0
note 1
V
O
= 0 to V
CC
CONDITIONS
−
−0.5
−
−0.5
−
−
−65
−
MIN.
−0.5
MAX.
+6.5
−50
+6.5
−50
+6.5
50
±100
+150
500
V
mA
V
mA
V
mA
mA
°C
mW
UNIT
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