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FESF8JT

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size107KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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FESF8JT Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
FESF8AT THRU FESF8JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 600 Volts
ITO-220AC
Forward Current -
8.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low leakage, high voltage
High surge current capability
Superfast recovery time, for high efficiency
High temperature soldering guaranteed:
250°C, 0.25" (6.35mm) from case for 10 seconds
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
0.600 (15.5)
0.580 (14.5)
0.670 (17.2)
0.646 (16.4)
2
0.350 (8.89)
0.330 (8.38)
PIN
1
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
0.110 (2.80)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC ITO-220AC fully overmolded plastic body
over passivated chip
Terminals:
Plated lead solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.064 ounce, 1.81 grams
Mounting Torque:
5 in. - lbs. max.
0.037 (0.94)
0.027 (0.69)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
0.022 (0.55)
0.014 (0.36)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
FESF
8AT
FESF
8BT
FESF
8CT
FESF
8DT
FESF
8FT
FESF
8GT
FESF
8HT
FESF
8JT UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
at rated DC blocking voltage
T
C
=25°C
at T
C
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
8.0
300
210
300
400
280
400
500
350
500
600 Volts
420 Volts
600 Volts
Amps
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJC
T
J
, T
STG
35.0
0.95
125.0
1.3
10.0
500.0
50.0
85.0
5.0
-65 to +150
60.0
1.5
Amps
Volts
µA
ns
pF
°C/W
°C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case mounted on heatsink
4/98

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Description 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 50 V, SILICON, RECTIFIER DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 200 V, SILICON, RECTIFIER DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 500 V, SILICON, RECTIFIER DIODE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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