NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
FESF8AT THRU FESF8JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 600 Volts
ITO-220AC
Forward Current -
8.0 Amperes
FEATURES
♦
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦
Glass passivated chip junction
♦
Low leakage, high voltage
♦
High surge current capability
♦
Superfast recovery time, for high efficiency
♦
High temperature soldering guaranteed:
250°C, 0.25" (6.35mm) from case for 10 seconds
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
0.600 (15.5)
0.580 (14.5)
0.670 (17.2)
0.646 (16.4)
2
0.350 (8.89)
0.330 (8.38)
PIN
1
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
0.110 (2.80)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC ITO-220AC fully overmolded plastic body
over passivated chip
Terminals:
Plated lead solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.064 ounce, 1.81 grams
Mounting Torque:
5 in. - lbs. max.
0.037 (0.94)
0.027 (0.69)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
0.022 (0.55)
0.014 (0.36)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
FESF
8AT
FESF
8BT
FESF
8CT
FESF
8DT
FESF
8FT
FESF
8GT
FESF
8HT
FESF
8JT UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
at rated DC blocking voltage
T
C
=25°C
at T
C
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
8.0
300
210
300
400
280
400
500
350
500
600 Volts
420 Volts
600 Volts
Amps
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJC
T
J
, T
STG
35.0
0.95
125.0
1.3
10.0
500.0
50.0
85.0
5.0
-65 to +150
60.0
1.5
Amps
Volts
µA
ns
pF
°C/W
°C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case mounted on heatsink
4/98
RATINGS AND CHARACTERISTIC CURVES FESF8AT THRU FESF8JT
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
10
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
HEATSINK, CASE TEMPERATURE, T
C
150
PEAK FORWARD SURGE CURRENT,
AMPERES
RESISTIVE OR
INDUCTIVE LOAD
8.0
125
100
75
50
25
0
1
T
C
=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
6.0
4.0
FREE AIR, AMBIENT, TEMPERATURE T
A
2.0
0
0
50
100
150
10
NUMBER OF CYCLES AT 60 H
Z
100
AMBIENT TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
40
INSTANTANEOUS FORWARD CURRENT,
AMPERES
100
T
J
=125°C
10
T
J
=25°C
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
10
25°C
T
J
=1
1.0
50 - 200V
300 - 400V
500 - 600V
PULSE WIDTH=300µs
1% DUTY CYCLE
1
10
T
J
=
0°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.1
25
T
J
=
°C
50-400V
500-600V
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
0.01
1,000
JUNCTION CAPACITANCE, pF
T
J
=25°C
f=1.0 MHz
Vsig=50mVp-p
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
50 - 400V
500 - 600V
10
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
