Chip Silicon Rectifier
FFM201 THRU FFM207
Fast recovery type
Formosa MS
SMA
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.067(1.7)
0.060(1.5)
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDE DO-214AC
C
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting P
osition : Any
Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
CONDITIONS
Ambient temperature = 55
o
C
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
2.0
50
5.0
100
UNIT
A
A
uA
uA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
35
40
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
F21
F22
F23
F24
F25
F26
F27
V
RRM
(V)
*1
V
RMS
(V)
35
70
140
280
420
560
700
*2
V
R
*3
V
F
*4
T
RR
*5
Operating
temperature
(
o
C)
(V)
50
100
200
400
600
800
1000
(V)
(nS)
FFM201
FFM202
FFM203
FFM204
FFM205
FFM206
FFM207
50
100
200
400
600
800
1000
150
*1 Repetitive peak reverse voltage
1.3
250
500
-55 to +150
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (FFM201 THRU FFM207)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
2.4
2.0
1.6
1.2
0.8
0.4
0
0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
INSTANTANEOUS FORWARD CURRENT,(A)
20
6.0
2.0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
50
0.2
.02
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLT
AGE,(V)
40
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
30
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
60
50
40
30
20
10
trr
+0.5A
|
|
|
|
|
|
|
|
0
-0.25A
JUNCTION CAPACITANCE,(pF)
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)