This week's new product recommendations: TI half-bridge MOSFET and GaN FET drivers and Molex low-profile LTE ceramic antennas

Latest update time：2019-12-25

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Digi-Key Daily short video

Keywords: GaN FET, half-bridge driver, high frequency and high efficiency, LMG1210, TI, cellular antenna, LTE, SMT, mobile data, wireless, Molex

This issue of Digi-Key Daily features two products: a TI half-bridge MOSFET and a GaN FET driver. Designed for ultra-high-frequency, high-efficiency applications, they feature adjustable dead time, ultra-low propagation delay, and 3.4ns high-side/low-side matching. Molex's low-profile ceramic cellular antennas combine high performance with miniaturization and easy installation, making them widely used in cellular data applications such as smartphones, infrastructure, and vending machines.

Product 1 : TI Half-Bridge MOSFET and GaN FET Driver

Texas Instruments ' LMG1210 is a 200V half-bridge MOSFET and gallium nitride field-effect transistor (GaN FET) driver designed for ultra-high-frequency, high-efficiency applications. It supports operating frequencies up to 50MHz and features adjustable dead time, ultra-small propagation delay (typically 10ms), and 3.4ns high-side/low-side matching to optimize system efficiency. The device has an internal LDO that ensures a 5V gate drive voltage regardless of the supply voltage.

The LMG1210 offers developers significant flexibility with two control input modes: Independent Input Mode (IIM) and PWM. In IIM, each output is independently controlled by a dedicated input. In PWM mode, two complementary output signals are generated from a single input, and the user can adjust the dead time of each edge between 0ns and 20ns.

Based on these features, the LMG1210 is suitable for applications such as high-speed DC/DC converters, RF envelope tracking, Class D audio amplifiers, Class E wireless charging, and high-precision motor control.

To learn more about TI's 200V half-bridge MOSFET and GaN FET drivers , watch this short video: