Micro-nano processing (semiconductor manufacturing technology) Swiss Federal Institute of Technology

This course will demonstrate the most efficient integrated circuit manufacturing processes in a ultra-clean environment to teach the basic principles and processes of semiconductor manufacturing.

• Chapter 1：Teaser (3 minutes and 19 seconds)

• Chapter 2：Successful MEMS products：accelerometer (8 minutes and 56 seconds)

• Chapter 3：Successful MEMS products：microphone (4 minutes and 42 seconds)

• Chapter 4：Successful MEMS products：BAW (9 minutes and 49 seconds)

• Chapter 5：Case study：thermomechanical microactuator (14 minutes and 51 seconds)

• Chapter 6：Cleanroom basics：introducing the issue of contamination (13 minutes and 10 seconds)

• Chapter 7：Cleanroom basics：cleanroom strategy (5 minutes and 56 seconds)

• Chapter 8：Basic principles of CVD and CVD reactors (14 minutes and 14 seconds)

• Chapter 9：CVD techniques at different operating pressure plasmaenhanced CVD and me (12 minutes and 9 seconds)

• Chapter 10：Atomic layer CVD ALD and thermal oxidation of silicon (8 minutes and 39 seconds)

• Chapter 11：Theoretical concepts of gas flow in CVD reactors (9 minutes and 29 seconds)

• Chapter 12：CVD thin film growth model (12 minutes and 41 seconds)

• Chapter 13：Specific CVD processes for siliconbased materials and diamond (15 minutes and 26 seconds)

• Chapter 14：Thermal oxidation processes of silicon and ALD deposition of specific oxid (12 minutes and 12 seconds)

• Chapter 15：Thermal evaporation：introduction and vapor creation (12 minutes and 33 seconds)

• Chapter 16：Thermal evaporation：film formation and examples (10 minutes and 32 seconds)

• Chapter 17：Thermal evaporation in CMi (3 minutes and 27 seconds)

• Chapter 18：Sputtering：introduction and plasma formation (8 minutes and 22 seconds)

• Chapter 19：Sputtering：spatial zones and Paschen law (6 minutes and 22 seconds)

• Chapter 20：Sputtering：DC RF magnetron (9 minutes and 57 seconds)

• Chapter 21：Sputtering：ion target interactions (6 minutes and 25 seconds)

• Chapter 22：Sputtering：film growth and control parameters (8 minutes and 18 seconds)

• Chapter 23：Sputtering：examples (11 minutes and 40 seconds)

• Chapter 24：Sputtering in CMi (2 minutes and 41 seconds)

• Chapter 25：SUPPLEMENTARY Other PVD methods (19 minutes and 41 seconds)

• Chapter 26：Film growth：atoms arrival and adhesion (6 minutes and 48 seconds)

• Chapter 27：Film growth：stress in thin films (9 minutes and 14 seconds)

• Chapter 28：SUPPLEMENTARY Film growth：growth modes and crystal structure (10 minutes and 43 seconds)

• Chapter 29：Introduction to lithography (6 minutes and 40 seconds)

• Chapter 30：Resist properties and exposure methods (12 minutes and 22 seconds)

• Chapter 31：SUPPLEMENTARY Photoresist sensitivity and modulation transfer function (4 minutes and 6 seconds)

• Chapter 32：UV lithography：direct writing and mask writing (11 minutes and 21 seconds)

• Chapter 33：UV lithography in CMi：mask fabrication (3 minutes and 49 seconds)

• Chapter 34：UV lithography：mask based lithography (9 minutes and 33 seconds)

• Chapter 35：UV lithography in CMi：mask based lithography (3 minutes and 2 seconds)

• Chapter 36：Electron beam lithography：tool overview (10 minutes and 19 seconds)

• Chapter 37：Electron beam lithography：electron optics and beam deflection (5 minutes and 6 seconds)

• Chapter 38：SUPPLEMENTARY Electron beam lithography：tool overview II (5 minutes and 27 seconds)

• Chapter 39：SUPPLEMENTARY Electron beam lithography：design preparation and fracture (13 minutes and 25 seconds)

• Chapter 40：Electron beam lithography：electronsample interactions (9 minutes and 59 seconds)

• Chapter 41：Electron beam lithography：resists (5 minutes and 53 seconds)

• Chapter 42：SUPPLEMENTARY Electron beam lithography：proximity effect (9 minutes and 6 seconds)

• Chapter 43：Alternative patterning methods：scanning probe lithography (7 minutes and 50 seconds)

• Chapter 44：SUPPLEMENTARY Alternative patterning methods：replication methods (16 minutes and 17 seconds)

• Chapter 45：Dry etching in a gas plasma：etching anisotropy (16 minutes and 13 seconds)

• Chapter 46：Deep dry etching of silicon dry etching without a plasma (15 minutes and 40 seconds)

• Chapter 47：Theoretical concepts of plasma generation (13 minutes and 12 seconds)

• Chapter 48：Types of dry etching equipment and plasma sources (16 minutes and 50 seconds)

• Chapter 49：Ion beam etching (7 minutes and 25 seconds)

• Chapter 50：Examples of etching processes for Sibased materials (22 minutes and 18 seconds)

• Chapter 51：Examples of etching processes for organic films and metals (23 minutes and 33 seconds)

• Chapter 52：Anisotropic and isotropic wet etching of Si and applications (14 minutes and 45 seconds)

• Chapter 53：HF bath for SiO2 and glass wet etching (12 minutes and 27 seconds)

• Chapter 54：Isotropic wet etching of silicon in the HNA bath (19 minutes and 20 seconds)

• Chapter 55：Anisotropic wet etching of silicon in alkaline baths (18 minutes and 2 seconds)

• Chapter 56：Etch stop techniques for thin membrane microfabrication and bulk micromach (13 minutes and 48 seconds)

• Chapter 57：Supercritical drying for realization of suspended structures test microst (12 minutes and 32 seconds)

• Chapter 58：Optical microscopy：inspection and dimension measurement (9 minutes and 48 seconds)

• Chapter 59：Optical thin film thickness measurement (7 minutes and 6 seconds)

• Chapter 60：Optical surface profile measurement (9 minutes and 27 seconds)

• Chapter 61：Mechanical surface profile measurement (9 minutes and 5 seconds)

• Chapter 62：Scanning electron microscopy (10 minutes and 45 seconds)

• Chapter 63：Focused ion beam：local cross sectional inspection and measurement (6 minutes and 45 seconds)

• Chapter 64：Electrical characterization (7 minutes and 33 seconds)