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High voltage evaluation board for PWD13F60

EVALPWD13F60

Overview

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.

The integrated power MOSFETs have a low R_DS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently.
The PWD13F60 accepts a supply voltage (V_CC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage.
The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an R_th(J-A) of 18 °C/W, capable to drive loads up to 2 A_RMS, without forced airflow cooling.
Both controlling and power signals are available on pin strip for easy connection to customer's board.

Main features

Power system-in-package integrating gate drivers and high-voltage power MOSFETs:
- Low R_DS(on) = 320 mΩ
- BV_DSS = 600 V
Suitable for operating as:
- Full-bridge
- Dual independent half-bridges
Wide input supply voltage down to 6.5 V
UVLO protection on supply voltage
3.3 V to 15 V compatible inputs with hysteresis and pull-down
Interlocking function to prevent cross conduction
Internal bootstrap diodes
QFN (10x13 mm) package
Very compact layout
RoHS compliant

Design Files

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It is your responsibility to test the circuit yourself and determine its suitability for you. EEWorld will not be liable for direct, indirect, special, incidental, consequential or punitive damages arising from any cause or anything connected to any reference design used.

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