PWD5F60 Smart Driver Demonstration Board with Integrated High Voltage Full Bridge

The integrated power MOSFETs have an R_DS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage. The embedded gate drivers feature two comparators that can be used for peak current control or overcurrent protection and integrate bootstrap diodes. This allows to effectively drive loads in a tiny space and to drastically reduce external components and bill of materials.
The EVALPWD5F60 demonstrates how to use the PWD5F60 to drive a single-phase load in full-bridge topology. This allows control of both the direction and the value of the current flowing into the load. Typical applications that can benefit from the high integration of the PWD5F60 are, for example, single-phase BLDC motors and fans.
The board has a very small footprint and an optimized layout thanks to the integrated features of the PWD5F60, and it can be simply run by applying the supply voltages and a direction signal.
The board allows easy selection and modification of the relevant external component values, enabling fast performance evaluation under different applicative conditions as well as fine tuning of final application components.