qoistoochee128

5kW Isolated Bidirectional DC-DC Converter

 
Overview
This reference design provides design guidelines, data and other content for a 5kW isolated bidirectional DC-DC converter using a 1200V SiC MOSFET dual active bridge (DAB) conversion method. Description High voltage side DC 732V to 768V Low voltage side DC 396V to 404V Rated power 5.0kW Circuit configuration Dual active bridge (DAB) conversion method Features Evaluation board image of 5kW isolated bidirectional DC-DC converter Total efficiency: 97% (Vin = 750V, 100% load condition) Dimensions: 565mm × 360mm × 270mm Overall solution of SiC MOSFET, MOSFET, smart gate driver IC and isolation amplifier.
参考设计图片
×

Blockdiagram

 
 
Search Datasheet?

Supported by EEWorld Datasheet

Forum More
Update:2025-05-09 08:27:04

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
community

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews


Room 1530, 15th Floor, Building B, No.18 Zhongguancun Street, Haidian District, Beijing, Postal Code: 100190 China Telephone: 008610 8235 0740

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号