Infineon 650 V CoolSiC™ MOSFET Series Analysis

Today's electronic products are inseparable from electronic components. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) further expands its silicon carbide (SiC) product portfolio and launches 650V devices. Its newly released CoolSiC™ MOSFETs meet the increasing demands for energy efficiency, power density and reliability requirements.

"With the new product launch, Infineon completes its portfolio of silicon-based, silicon carbide and gallium nitride power semiconductors in the 600V/650V segment," said Infineon's High Voltage Conversion Business Unit Power Management and Diversified Markets Senior Director Steffen Metzger said, “This underlines our unique position in the market: Infineon is the only manufacturer on the market that can offer a full range of power products covering materials such as silicon, silicon carbide and gallium nitride. And the new The CoolSiC™ series supports our ambition to become the number one supplier of industrial SiC MOSFET switches."

The 650 V CoolSiC™ MOSFET devices are rated from 27 mΩ to 107 mΩ and are available in the typical TO-247 3-pin package or the lower switching loss TO-247 4-pin package. Compared with all CoolSiC™ MOSFET products released in the past, the new 650V series is based on Infineon's advanced trench semiconductor technology. By maximizing the strong physical properties of silicon carbide, the device ensures excellent reliability, outstanding switching losses and conduction losses. In addition, they offer the highest transconductance level (gain), 4V threshold voltage (Vth) and short-circuit robustness. All in all, trench technology enables the lowest losses in the application and the best reliability in operation without any compromises.

Compared with other silicon-based and silicon carbide solutions on the market, 650 V CoolSiC™ MOSFETs can bring more attractive advantages: better switching efficiency at higher switching frequencies and excellent reliability. These devices offer excellent thermal performance thanks to ultra-low temperature-dependent on-resistance (RDS(on)). In addition, they feature a rugged body diode with very low reverse recovery charge: approximately 80% lower than the best superjunction CoolMOS™ MOSFETs. Its commutation robustness makes it easy to achieve an overall system efficiency of 98%, such as through continuous conduction mode totem pole power factor correction (PFC).

To simplify the design of applications using 650 V CoolSiC™ MOSFETs and ensure efficient device operation, Infineon also offers dedicated single- and dual-channel electrically isolated EiceDRIVER™ gate driver ICs. This solution (which integrates CoolSiC™ switches and dedicated gate driver ICs) helps reduce system cost and total cost of ownership, as well as improve energy efficiency. CoolSiC™ MOSFETs work seamlessly with other Infineon EiceDRIVER™ gate driver family ICs.

Availability

The 650 V CoolSiC™ MOSFET series is available in eight versions in two plug-in TO-247 packages and is now available for ordering. Three dedicated gate driver ICs will be available starting in March 2020. The above is the Infineon 650 V CoolSiC™ MOSFET series that brings the best reliability and performance levels to more applications. I hope it can help everyone when making a choice.