| Part Number | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SJ360 | Toshiba Semiconductor | Chopper Regulator, DC−DC Converter and Motor Drive Applications | Download |
| 2SJ360 | KEXIN | MOS Field Effect Transistors | Download |
| 2SJ360 | VBsemi Electronics Co. Ltd. | P-Channel 60-V (D-S) MOSFET | Download |
| 2SJ360_07 | Toshiba Semiconductor | chopper regulator, DC8722;DC converter and motor drive applications | Download |
| 2SJ360_09 | Toshiba Semiconductor | Chopper Regulator, DC−DC Converter and Motor Drive Applications | Download |
| 2SJ360_15 | KEXIN | P-Channel MOSFET | Download |
| 2SJ360F | Toshiba Semiconductor | MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V | Download |
| 2SJ360(F) | Toshiba Semiconductor | MOSFET P-CH 60V 1A SC-62 | Download |
| 2SJ360TE12L | Toshiba Semiconductor | TRANSISTOR 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | Download |
| 2SJ360(TE12L) | Toshiba Semiconductor | MOSFET P-CH 60V 1A PW-MINI | Download |
| 2SJ360(TE12L,F) | Toshiba Semiconductor | MOSFET P-CH 60V 1A SC-62 | Download |
| 2SJ360TE12R | Toshiba Semiconductor | TRANSISTOR 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | Download |
| Part Number | Datasheet |
|---|---|
| 2SJ360(TE12L) 、 2SJ360TE12R | Download Datasheet |
| 2SJ360(F) 、 2SJ360(TE12L,F) | Download Datasheet |
| 2SJ360F | Download Datasheet |
| 2SJ360TE12L | Download Datasheet |
| 2SJ360_15 | Download Datasheet |
| 2SJ360_07 | Download Datasheet |
| 2SJ360 | Download Datasheet |
| 2SJ360 | Download Datasheet |
| 2SJ360_09 | Download Datasheet |
| Part Number | 2SJ360(F) | 2SJ360(TE12L,F) |
|---|---|---|
| Description | MOSFET P-CH 60V 1A SC-62 | MOSFET P-CH 60V 1A SC-62 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | unknown | unknown |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | 60 V |
| Maximum drain current (ID) | 1 A | 1 A |
| Maximum drain-source on-resistance | 1.2 Ω | 1.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-F3 | R-PSSO-F3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL | P-CHANNEL |
| surface mount | YES | YES |
| Terminal form | FLAT | FLAT |
| Terminal location | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |