| Part Number | Manufacturer | Description | Datasheet |
|---|---|---|---|
| BF543 | Vishay Telefunken (Vishay) | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Download |
| BF543 | TEMIC | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | Download |
| BF543 | SIEMENS | Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) | Download |
| BF543 | Infineon | Silicon N-Channel MOSFET Triode | Download |
| BF543 | Vishay | N-Channel MOS-Fieldeffect Triode, Depletion Mode | Download |
| BF543A | TEMIC | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | Download |
| BF543A | Vishay Telefunken (Vishay) | Transistor, | Download |
| BF543A-GS08 | Vishay | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Download |
| BF543B | Vishay Telefunken (Vishay) | Transistor, | Download |
| BF543B | TEMIC | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | Download |
| BF543B-GS08 | Vishay | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Download |
| BF543E6327 | SIEMENS | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | Download |
| BF543E6327 | Infineon | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | Download |
| BF543E6433 | SIEMENS | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | Download |
| BF543E6433 | Infineon | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | Download |
| Part Number | Datasheet |
|---|---|
| BF543E6327 、 BF543E6327 、 BF543E6433 、 BF543E6433 | Download Datasheet |
| BF543 、 BF543A 、 BF543B | Download Datasheet |
| BF543A-GS08 、 BF543B-GS08 | Download Datasheet |
| BF543A 、 BF543B | Download Datasheet |
| BF543 | Download Datasheet |
| BF543 | Download Datasheet |
| BF543 | Download Datasheet |
| BF543 | Download Datasheet |
| Part Number | BF543E6433 | BF543E6327 | BF543E6327 | BF543E6433 |
|---|---|---|---|---|
| Description | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
| Maker | Infineon | SIEMENS | Infineon | SIEMENS |
| Reach Compliance Code | unknown | unknown | compliant | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 20 V | 20 V | 20 V | 20 V |
| Maximum drain current (ID) | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| highest frequency band | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | - | SMALL OUTLINE, R-PDSO-G3 |