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FCX789ATA

Among 2 related components, FCX789ATA have related pdf.
Part Number Manufacturer Description Datasheet
FCX789ATA Diodes transistors bipolar - bjt pnp high gain Download
FCX789ATA Diodes Incorporated Bipolar Transistors - BJT PNP High Gain Download
FCX789ATA parameters:

Description

Bipolar Transistors - BJT PNP High Gain

Parametric
Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time15 weeks
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

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