FPAL20SM60
FPAL20SM60
Smart Power Module (SPM)
General Description
FPAL20SM60 is an advanced smart power module (SPM)
that Fairchild has newly developed and designed to provide
very compact and low cost, yet high performance ac motor
drives mainly targeting medium speed low-power inverter-
driven application like air conditioners. It combines
optimized circuit protection and drive matched to low-loss
IGBTs. Highly effective short-circuit current detection/
protection is realized through the use of advanced current
sensing IGBT chips that allow continuous monitoring of the
IGBTs current. System reliability is further enhanced by the
built-in over-temperature and integrated under-voltage
lock-out protection. The high speed built-in HVIC provides
opto-coupler-less IGBT gate driving capability that further
reduce the overall size of the inverter system design. In
addition the incorporated HVIC facilitates the use of single-
supply drive topology enabling the FPAL20SM60 to be
driven by only one drive supply voltage without negative
bias.
Features
• UL Certified No. E209204
• 600V-20A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection
• Single-grounded power supply due to built-in HVIC
• Typical switching frequency of 7kHz
• Built-in thermistor for over-temperature monitoring
• Inverter power rating of 1.4kW / 100~253 Vac
• Isolation rating of 2500Vrms/min.
• Very low leakage current due to using ceramic substrate
• Adjustable current protection level by varying series
resistor value with sense-IGBTs
Applications
• AC 100V ~ 253V three-phase inverter drive for small
power (1.4kW) ac motor drives
• Home appliances applications requiring medium
switching frequency operation like air conditioners drive
system
• Application ratings:
- Power : 1.4 kW / 100~253 Vac
- Switching frequency : Typical 7kHz (PWM Control)
- 100% load current : 10A (Irms)
External View and Marking Information
Top View
Bottom View
57 mm
55 mm
Marking
Device Name
Version, Lot Code
Fig. 1.
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
FPAL20SM60
Integrated Power Functions
• 600V-20A IGBT inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 11, 16 and 17.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Temperature Monitoring: System over-temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Fig. 17.
• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side supply)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
V
S(U)
V
B(U)
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
R
SC
NC
V
TH
R
TH
V
CC(UH)
IN
(UH)
V
S(V)
V
B(V)
V
CC(VH)
IN
(VH)
COM
(H)
V
S(W)
V
B(W)
V
CC(WH)
IN
(WH)
W
V
U
N
P
Fig. 2.
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Pin Name
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
R
SC
NC
V
TH
R
TH
W
V
U
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Low-side Common Supply Ground
Signal Input Terminal for Low-side U Phase
Signal Input Terminal for Low-side V Phase
Signal Input Terminal for Low-side W Phase
Fault Output Terminal
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-current Detection Input
Resistor for Short-circuit Current Detection
NO Connection
Thermistor Bias Voltage
Series Resistor for the Use of Thermistor (Temperature Detection)
Output Terminal for W Phase
Output Terminal for V Phase
Output Terminal for U Phase
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
FPAL20SM60
Pin Descriptions
(Continued)
Pin Number
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Pin Name
N
P
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
COM
(H)
IN
(VH)
V
CC(VH)
V
B(V)
V
S(V)
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
Pin Description
Negative DC–Link Input
Positive DC–Link Input
Signal Input Terminal for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
High-side Common Supply Ground
Signal Input Terminal for High-side V Phase
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input Terminal for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Internal Equivalent Circuit and Input/Output Pins
(29) V
B(U)
VB
(1) V
CC(L)
(2) COM
(L)
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
V
CC
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
(FO)
Wout
(7) C
FOD
(8) C
SC
(9) R
SC
(10) NC
(11) V
TH
(12) R
TH
THERMISTOR
C
(FOD)
C
(SC)
VB
HO
Vcc
IN
Vout
Uout
HO
Vcc
IN
(28) V
CC(UH)
(27) IN
(UH)
VS COM
(30) V
S(U)
(25) V
B(V)
VB
HO
Vcc
IN
(24) V
CC(VH)
(23) IN
(VH)
(22) COM
(H)
(26) V
S(V)
(20) V
B(W)
(19) V
CC(WH)
(18) IN
(WH)
VS COM
VS COM
(21) V
S(W)
W
(13)
V
(14)
U
(15)
N
(16)
P
(17)
Note
1. Inverter low-side ( (1) – (12) pins) is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving,
current sensing and protection functions.
2. Inverter power side ( (13) – (17) pins) is composed of two inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side ( (18) – (30) pins) is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
Fig. 3.
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
FPAL20SM60
Absolute Maximum Ratings
Inverter Part
(T
C
= 25°C,
Item
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Unless Otherwise Specified)
Symbol
V
DC
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
T
C
= 25°C (Note Fig. 4)
T
C
= 25°C (Note Fig. 4)
T
C
= 25°C per One Chip
(Note 1)
Condition
Applied to DC - Link
Applied between P- N
Rating
450
500
600
20
40
50
-55 ~ 150
Unit
V
V
V
A
A
W
°C
Note
1. It would be recommended that the average junction temperature should be limited to T
J
≤
125°C (@T
C
≤
100°C) in order to guarantee safe operation.
Control Part
(T
C
= 25°C,
Item
Control Supply Voltage
Unless Otherwise Specified)
Symbol
Condition
Applied between V
CC(H)
- COM
(H)
, V
CC(L)
- COM
(L)
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
- COM
(H)
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
(L)
Applied between V
FO
- COM
(L)
Sink Current at V
FO
Pin
Applied between C
SC
- COM
(L)
Rating
18
20
-0.3 ~ 6.0
-0.3~V
CC
+0.5
5
-0.3~V
CC
+0.5
Unit
V
V
V
V
mA
V
High-side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Total System
Item
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Symbol
Condition
V
PN(PROT)
Applied to DC - Link,
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 125°C, Non-repetitive, less than 6µs
T
C
T
STG
V
ISO
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat-sink Plate
Note Fig. 4
Rating
400
Unit
V
-20 ~ 100
-55 ~ 150
2500
°C
°C
V
rms
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
FPAL20SM60
Case Temperature (T
C
) Detecting Point
V
S(U)
V
B(U)
V
CC(L)
COM
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
R
SC
NC
V
TH
R
TH
V
CC(UH)
IN
(UH)
V
S(V)
V
B(V)
V
CC(VH)
IN
(VH)
COM
V
S(W)
V
B(W)
V
CC(WH)
IN
(WH)
Ceramic
Substate
W
V
U
N
P
Fig. 4. T
c
Measurement Point
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
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