Features
•
Single Voltage Operation
•
•
•
– 5V Read
– 5V Programming
Fast Read Access Time - 55 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 4K Words (8K bytes) Parameter Blocks
– One 240K Words (480K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Byte-by-Byte or Word-By-Word Programming - 10
µs
Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low-Power Dissipation
– 50 mA Active Current
– 300
µA
CMOS Standby Current
Typical 10,000 Write Cycles
•
•
•
•
•
•
Description
The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories orga-
nized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured
with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times
to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby
current is less than 300
µA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49F004/4096A locates the boot block at lowest order
addresses (“bottom boot”); the AT49F004T/4096AT locates it at highest order
addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49F004(T)/4096A(T) does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus con-
tention. Reprogramming the AT49F004(T)/4096A(T) is performed by first erasing a
4-Megabit
(512K x 8/
256K x 16)
CMOS Flash
Memory
AT49F004
AT49F004T
AT49F4096A
AT49F4096AT
Preliminary
(continued)
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
RESET
RDY/BUSY
I/O0 - I/O14
I/O15(A-1)
BYTE
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Ready/Busy Output
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
Rev. 1167A–09/98
1
AT49F4096A(T) SOIC (SOP)
AT49F4096A(T) TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
GND
I/O15 / A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
AT49F004(T) TSOP Top View
Type 1
A16
A15
A14
A13
A12
A11
A9
A8
WE
RESET
NC
RDY/BUSY
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A17
GND
NC
NC
A10
I/O7
I/O6
I/O5
I/O4
VCC
VCC
NC
I/O3
I/O2
I/O1
I/O0
OE
GND
CE
A0
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
block of data and then programming on a byte-by-byte or
word-by-word basis.
The device is erased by executing the erase command
sequence; the device internally controls the erase opera-
tion. The memory is divided into four blocks for erase oper-
ations. There are two 4K word parameter block sections,
the boot block, and the main memory array block. The typi-
cal number of program and erase cycles is in excess of
10,000 cycles.
The 8K word boot block section includes a reprogramming
lock out feature to provide data integrity. This feature is
enabled by a command sequence. Once the boot block
programming lockout feature is enabled, the data in the
boot block cannot be changed when input levels of 5.5
volts or less are used. The boot sector is designed to con-
tain user secure code.
For the AT49F4096A(T), the BYTE pin controls whether
the device data I/O pins operate in the byte or word config-
uration. If the BYTE pin is set at a logic “1” or left open, the
device is in word configuration, I/O0 - I/O15 are active and
controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte con-
figuration, and only data I/O pins I/O0 - I/O7 are active and
controlled by CE and OE. The data I/O pins I/O8 - I/O14
are tri-stated and the I/O15 pin is used as an input for the
LSB (A-1) address function.
2
AT49F004(T)/4096A(T)
AT49F004(T)/4096A(T)
AT49F004(T) Block Diagram
AT49F004
AT49F004T
V
CC
GND
OE
WE
CE
RESET
ADDRESS
INPUTS
DATA INPUTS/OUTPUTS
I/O0 - I/O7
DATA INPUTS/OUTPUTS
I/O0 - I/O7
CONTROL
LOGIC
INPUT/OUTPUT
BUFFERS
PROGRAM DATA
LATCHES
Y-GATING
MAIN MEMORY
(480K BYTES)
PARAMETER
BLOCK 2
8K BYTES
PARAMETER
BLOCK 1
8K BYTES
BOOT BLOCK
16K BYTES
INPUT/OUTPUT
BUFFERS
PROGRAM DATA
LATCHES
Y-GATING
Y DECODER
X DECODER
7FFFF
08000
07FFF
06000
05FFF
04000
03FFF
00000
BOOT BLOCK
16K BYTES
PARAMETER
BLOCK 1
8K BYTES
PARAMETER
BLOCK 2
8K BYTES
MAIN MEMORY
480K BYTES
7FFFF
7C000
7BFFF
7A000
79FFF
78000
77FFF
00000
AT49F4096A(T) Block Diagram
AT49F4096A
AT49F4096AT
V
CC
GND
OE
WE
CE
RESET
ADDRESS
INPUTS
DATA INPUTS/OUTPUTS
I/O0 - I/O15
DATA INPUTS/OUTPUTS
I/O0 - I/O15
CONTROL
LOGIC
INPUT/OUTPUT
BUFFERS
PROGRAM DATA
LATCHES
Y-GATING
MAIN MEMORY
(240K WORDS)
PARAMETER
BLOCK 2
4K WORDS
PARAMETER
BLOCK 1
4K WORDS
BOOT BLOCK
8K WORDS
INPUT/OUTPUT
BUFFERS
PROGRAM DATA
LATCHES
Y-GATING
Y DECODER
X DECODER
3FFFF
04000
03FFF
03000
02FFF
02000
01FFF
00000
BOOT BLOCK
8K WORDS
PARAMETER
BLOCK 1
4K WORDS
PARAMETER
BLOCK 2
4K WORDS
MAIN MEMORY
(240K WORDS)
3FFFF
3E000
3DFFF
3D000
3CFFF
3C000
3BFFF
00000
Device Operation
READ:
The AT49F004(T)/4096A(T) is accessed like an
EPROM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the
address pins is asserted on the outputs. The outputs are
put in the high impedance state whenever CE or OE is
high. This dual-line control gives designers flexibility in pre-
venting bus contention.
COMMAND SEQUENCES:
When the device is first pow-
ered on it will be reset to the read or standby mode
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table
(I/O8 - I/O15 are don’t care inputs for the command codes).
The command sequences are written by applying a low
pulse on the WE or CE input with CE or WE low (respec-
tively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocessor write timings are used. The address loca-
tions used in the command sequences are not affected by
entering the command sequences.
RESET:
A RESET input pin is provided to ease some sys-
tem applications. When RESET is at a logic high level, the
3
device is in its standard operating mode. A low level on the
RESET input halts the present device operation and puts
the outputs of the device in a high impedance state. When
a high level is reasserted on the RESET pin, the device
returns to the Read or Standby mode, depending upon the
state of the control inputs. By applying a 12V
±
0.5V input
signal to the RESET pin the boot block array can be repro-
grammed even if the boot block program lockout feature
has been enabled (see Boot Block Programming Lockout
Override section).
ERASURE:
Before a byte or word can be reprogrammed, it
must be erased. The erased state of memory bits is a logi-
cal “1”. The entire device can be erased by using the Chip
Erase command or individual sectors can be erased by
using the Sector Erase commands.
CHIP ERASE:
The entire device can be erased at one time
by using the 6-byte chip erase software code. After the chip
erase has been initiated, the device will internally time the
erase operation so that no external clocks are required.
The maximum time to erase the chip is t
EC
.
If the boot block lockout has been enabled, the Chip Erase
will not erase the data in the boot block; it will erase the
main memory block and the parameter blocks only. After
the chip erase, the device will return to the read or standby
mode.
SECTOR ERASE:
As an alternative to a full chip erase, the
device is organized into four sectors that can be individually
erased. There are two 4K word parameter block sections,
one boot block, and the main memory array block. The
Sector Erase command is a six bus cycle operation. The
sector address is latched on the falling WE edge of the
sixth cycle while the 30H data input command is latched at
the rising edge of WE. The sector erase starts after the ris-
ing edge of WE of the sixth cycle. The erase operation is
internally controlled; it will automatically time to completion.
Whenever the main memory block is erased and repro-
grammed, the two parameter blocks should be erased and
reprogrammed before the main memory block is erased
again. Whenever a parameter block is erased and repro-
grammed, the other parameter block should be erased and
reprogrammed before the first parameter block is erased
again. Whenever the boot block is erased and repro-
grammed, the main memory block and the parameter
blocks should be erased and reprogrammed before the
boot block is erased again.
BYTE/WORD PROGRAMMING:
Once a memory block is
erased, it is programmed (to a logical “0”) on a byte-by-byte
or word-by-word basis. Programming is accomplished via
the internal device command register and is a 4 bus cycle
operation. The device will automatically generate the
required internal program pulses.
Any commands written to the chip during the embedded
programming cycle will be ignored. If a hardware reset hap-
pens during programming, the data at the location being
programmed will be corrupted. Please note that a data “0”
cannot be programmed back to a “1”; only erase operations
can convert “0”s to “1”s. Programming is completed after
the specified t
BP
cycle time. The DATA polling feature may
also be used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT:
The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K words. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot block’s usage as a write protected region is
optional to the user. The address range of the boot block is
00000H to 03FFFH for the AT49F004; 7C000H to 7FFFFH
for the AT49F004T; 00000H to 01FFFH for the
AT49F4096A; and 3E000H to 3FFFFH for the
AT49F4096AT.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed when input levels of
5.5V or less are used. Data in the main memory block can
still be changed through the regular programming method.
To activate the lockout feature, a series of six program
commands to specific addresses with specific data must be
performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION:
A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from the fol-
lowing address location will show if programming the boot
block is locked out—00002H for AT49F004 and
AT49F4096A; 7C002 for the AT49F004T; and 3E002H for
the AT49F4096AT. If the data on I/O0 is low, the boot block
can be programmed; if the data on I/O0 is high, the pro-
gram lockout feature has been enabled and the block can-
not be programmed. The software product identification
exit code should be used to return to standard operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE:
The user can override the boot block programming lockout
by taking the RESET pin to 12 volts during the entire chip
erase, sector erase or word programming operation. When
the RESET pin is brought back to TTL levels the boot block
programming lockout feature is again active.
PRODUCT IDENTIFICATION:
The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
4
AT49F004(T)/4096A(T)
AT49F004(T)/4096A(T)
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING:
The AT49F004(T)/4096A(T) features
DATA polling to indicate the end of a program cycle. During
a program cycle an attempted read of the last byte loaded
will result in the complement of the loaded data on I/O7.
Once the program cycle has been completed, true data is
valid on all outputs and the next cycle may begin. During a
chip or sector erase operation, an attempt to read the
device will give a “0” on I/O7. Once the program or erase
cycle has completed, true data will be read from the device.
DATA polling may begin at any time during the program
cycle.
T O G G L E B I T :
I n a d d i t i o n t o DATA p o l l i n g t h e
AT49F004(T)/4096A(T) provides another method for deter-
mining the end of a program or erase cycle. During a pro-
gram or erase operation, successive attempts to read data
from the device will result in I/O6 toggling between one and
zero. Once the program cycle has completed, I/O6 will stop
toggling and valid data will be read. Examining the toggle
bit may begin at any time during a program cycle.
READY/BUSY:
For the AT49F004(T), pin 12 is an open
drain READY/BUSY output pin which provides another
method of detecting the end of a program or erase opera-
tion. RDY/BUSY is actively pulled low during the internal
program and erase cycles and it is released at the comple-
tion of the cycle. The open drain connection allows for OR-
tying of several devices to the same RDY/BUSY line.
HARDWARE DATA PROTECTION:
Hardware features
protect against inadvertent programs to the
AT49F004(T)/4096A(T) in the following ways: (a) V
CC
sense: if V
CC
is below 3.8V (typical), the program function
is inhibited. (b) V
CC
power on delay: once V
CC
has reached
the V
CC
sense level, the device will automatically time out
10 ms (typical) before programming. (c) Program inhibit:
holding any one of OE low, CE high or WE high inhibits
program cycles. (d) Noise filter: pulses of less than 15 ns
(typical) on the WE or CE inputs will not initiate a program
cycle.
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