EEWORLDEEWORLDEEWORLD

Part Number

Search

FQI4P40

Description
400V P-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size642KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FQI4P40 Overview

400V P-Channel MOSFET

FQI4P40 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-262
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)260 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)3.5 A
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance3.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)85 W
Maximum pulsed drain current (IDM)14 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FQB4P40 / FQI4P40
August 2000
QFET
FQB4P40 / FQI4P40
400V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
TM
Features
-3.5A, -400V, R
DS(on)
= 3.1Ω @V
GS
= -10 V
Low gate charge ( typical 18 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
S
!
G
!
G
S
▶ ▲
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB4P40 / FQI4P40
-400
-3.5
-2.2
-14
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
260
-3.5
8.5
-4.5
3.13
85
0.68
-55 to +150
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.47
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, August 2000

FQI4P40 Related Products

FQI4P40 FQB4P40
Description 400V P-Channel MOSFET 400V P-Channel MOSFET
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Parts packaging code TO-262 TO-263
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 260 mJ 260 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V
Maximum drain current (Abs) (ID) 3.5 A 3.5 A
Maximum drain current (ID) 3.5 A 3.5 A
Maximum drain-source on-resistance 3.1 Ω 3.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-262AA TO-263AB
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 85 W 85 W
Maximum pulsed drain current (IDM) 14 A 14 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
Can the MSP430f5524 be woken up by USB insertion?
Can the MSP430f5524 be awakened by USB insertion? Where can I find relevant information?...
灞波儿奔 Microcontroller MCU
Introduction to IC chip types
Introduction to IC chip types 1. According to functional structure Integrated circuits, also known as ICs, can be divided into three categories according to their functions and structures: analog inte...
卓联微科技 TI Technology Forum
Flow meter related questions and answers
What are the common fault phenomena of electromagnetic flowmeter? Common fault phenomena of electromagnetic flowmeter include: (1) No flow signal; (2) Output shaking; (3) Zero point instability; (4) F...
totopper Industrial Control Electronics
Problems with protel99se
I always have trouble drawing the component library and package library myself. They are either too big or too small. When I draw a component, there is a column for electrical type (power, output, inp...
zhouxiyuang PCB Design
Detailed list and contact information of domestic IC design companies in Shanghai
Detailed list and contact information of domestic IC design companies in Shanghai Company name cadence Design capabilities and main products Address zip code Room 4601-4603, Plaza 66, 1266 Nanjing Wes...
ys3663391 FPGA/CPLD
MIPS Architecture Q & A
Recently, more and more people have asked me questions about the MIPS architecture, so I will summarize them here. I hope that all questions about MIPS at the general professional level can be answere...
richiefang Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 43  334  1734  560  123  1  7  35  12  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号