FSF450D datasheet, PDF - EEWORLD Datasheet

FSF450D, FSF450R

June 1998

9A, 500V, 0.600 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

umerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Features

• 9A, 500V, r

DS(ON)

= 0.600Ω

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

2

with

V

DS

up to 80% of Rated Breakdown and

V

GS

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

DM

• Photo Current

- 30nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E12 Neutrons/cm

2

- Usable to 3E13 Neutrons/cm

2

Ordering Information

RAD LEVEL

10K

100K

SCREENING LEVEL PART NUMBER/BRAND

Commercial

TXV

Commercial

TXV

Space

FSF450D1

FSF450D3

FSF450R1

FSF450R3

FSF450R4

Symbol

D

G

Formerly available as type TA17659.

S

Package

TO-254AA

G

S

D

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

|

Copyright

©

Intersil Corporation 1999

File Number

3970.3

3-119

FSF450D, FSF450R

Absolute Maximum Ratings

T

C

= 25

o

C, Unless Otherwise Speciﬁed

FSF450D, FSF450R

500

9

6

27

±20

125

50

1.00

27

9

27

-55 to 150

300

UNITS

V

A

V

W

W/

o

C

A

o

C

o

C

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

Drain to Gate Voltage (R

GS

= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current

T

C

= 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

T

C

= 100

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

Maximum Power Dissipation

T

C

= 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

C

= 100

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I

AS

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

S

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

SM

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

J

, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

(Distance >0.063in (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations

PARAMETER

T

C

= 25

o

C, Unless Otherwise Speciﬁed

SYMBOL

BV

DSS

V

GS(TH)

TEST CONDITIONS

I

D

= 1mA, V

GS

= 0V

V

GS

= V

DS

,

I

D

= 1mA

T

C

= -55

o

C

T

C

= 25

o

C

T

C

= 125

o

C

T

C

= 25

o

C

T

C

= 125

o

C

T

C

= 25

o

C

T

C

= 125

o

C

MIN

500

-

1.5

0.5

-

TYP

-

MAX

-

5.0

4.0

-

25

250

100

200

5.67

T

C

= 25

o

C

T

C

= 125

o

C

-

V

GS

= 0V to 20V

V

GS

= 0V to 12V

V

GS

= 0V to 2V

V

DD

= 250V,

I

D

= 9A

-

I

D

= 9A, V

DS

= 15V

V

DS

= 25V, V

GS

= 0V,

f = 1MHz

-

0.425

-

110

-

21

49

7

3150

540

150

-

0.600

1.20

150

140

180

70

220

150

8.2

28

62

-

1.00

48

UNITS

V

µA

nA

V

Ω

ns

nC

V

pF

o

C/W

o

C/W

Drain to Source Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 400V,

V

GS

= 0V

V

GS

=

±20V

Gate to Source Leakage Current

I

GSS

Drain to Source On-State Voltage

Drain to Source On Resistance

V

DS(ON)

r

DS(ON)12

V

GS

= 12V, I

D

= 9A

I

D

= 6A,

V

GS

= 12V

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate Charge at 12V

Threshold Gate Charge

Gate Charge Source

Gate Charge Drain

Plateau Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

t

d(ON)

t

r

t

d(OFF)

t

f

Q

g(TOT)

Q

g(12)

Q

g(TH)

Q

gs

Q

gd

V

(PLATEAU)

C

ISS

C

OSS

C

RSS

R

θ

JC

R

θ

JA

V

DD

= 250V, I

D

= 9A,

R

L

= 27.8Ω, V

GS

= 12V,

R

GS

= 2.35Ω

3-120

FSF450D, FSF450R

Source to Drain Diode Speciﬁcations

PARAMETER

Forward Voltage

Reverse Recovery Time

SYMBOL

V

SD

t

rr

I

SD

= 9A

I

SD

= 9A, dI

SD

/dt = 100A/µs

T

C

= 25

o

C, Unless Otherwise Speciﬁed

SYMBOL

(Note 3)

(Notes 2, 3)

(Note 3)

(Notes 1, 3)

BV

DSS

V

GS(TH)

I

GSS

I

DSS

V

DS(ON)

r

DS(ON)12

TEST CONDITIONS

V

GS

= 0, I

D

= 1mA

V

GS

= V

DS

, I

D

= 1mA

V

GS

=

±20V,

V

DS

= 0V

V

GS

= 0, V

DS

= 400V

V

GS

= 12V, I

D

= 9A

V

GS

= 12V, I

D

= 6A

MIN

500

1.5

-

MAX

-

4.0

100

25

5.67

0.600

UNITS

V

nA

µA

V

Ω

TEST CONDITIONS

MIN

0.6

-

TYP

-

MAX

1.8

810

UNITS

V

ns

Electrical Speciﬁcations up to 100K RAD

PARAMETER

Drain to Source Breakdown Volts

Gate to Source Threshold Volts

Gate to Body Leakage

Zero Gate Leakage

Drain to Source On-State Volts

Drain to Source On Resistance

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both V

GS

= 12V, V

DS

= 0V and V

GS

= 0V, V

DS

= 80% BV

DSS

.

Single Event Effects (SEB, SEGR)

Note 4

ENVIRONMENT

(NOTE 5)

ION

SPECIES

Ni

Br

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm

2

(typical), T = 25

o

C.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

TYPICAL LET

(MeV/mg/cm)

26

37

TYPICAL

RANGE (µ)

43

36

APPLIED

V

GS

BIAS

(V)

-15

-20

-5

-10

-15

(NOTE 6)

MAXIMUM

V

DS

BIAS

(V)

500

450

500

400

100

TEST

Single Event Effects Safe Operating

Area

SYMBOL

SEESOA

Typical Performance Curves

Unless Otherwise Speciﬁed

FLUENCE = 1E5 IONS/cm

2

(TYPICAL)

LIMITING INDUCTANCE (HENRY)

600

500

400

V

DS

(V)

300

200

100

0

LET = 26MeV/mg/cm

2

, RANGE = 43µ

LET = 37MeV/mg/cm

2

, RANGE = 36µ

1E-3

1E-4

ILM = 10A

30A

1E-5

100A

300A

1E-6

TEMP = 25

o

C

-5

-10

V

GS

(V)

-15

-20

-25

1E-7

10

30

100

DRAIN SUPPLY (V)

300

1000

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO I

AS

3-121

FSF450D, FSF450R

Typical Performance Curves

12

Unless Otherwise Speciﬁed

(Continued)

100

T

C

= 25

o

C

10

I

D

, DRAIN CURRENT (A)

10

I

D

, DRAIN (A)

8

6

4

2

0

-50

1

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(ON)

100ms

1

10

100

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

100µs

1ms

10ms

1000

0

50

100

o

C)

T

C

, CASE TEMPERATURE (

150

0.1

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

2.5

PULSE DURATION = 250µs, V

GS

= 12V, I

D

= 6A

NORMALIZED r

DS(ON)

12V

Q

G

2.0

1.5

Q

GS

Q

GD

1.0

V

G

0.5

0.0

CHARGE

-80

-40

0

40

80

120

160

T

J

, JUNCTION TEMPERATURE (

o

C)

FIGURE 5. BASIC GATE CHARGE WAVEFORM

10

FIGURE 6. NORMALIZED r

DS(ON)

vs JUNCTION TEMPERATURE

NORMALIZED

THERMAL RESPONSE (Z

θ

JC

)

1

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.1

P

DM

0.01

t

1

t

2

NOTES:

DUTY FACTOR: D = t

1

/t

2

PEAK T

J

= P

DM

x Z

θ

JC

+ T

C

10

-3

10

-2

10

-1

10

0

10

1

0.001

10

-5

10

-4

t, RECTANGULAR PULSE DURATION (s)

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

3-122

FSF450D, FSF450R

Typical Performance Curves

100

I

AS

, AVALANCHE CURRENT (A)

Unless Otherwise Speciﬁed

(Continued)

STARTING T

J

= 25

o

C

10

STARTING T

J

= 150

o

C

1

IF R = 0

t

AV

= (L) (I

AS

) / (1.3 RATED BV

DSS

- V

DD

)

IF R

≠

0

t

AV

= (L/R) ln [(I

AS

*R) / (1.3 RATED BV

DSS

- V

DD

) + 1]

0.1

0.01

0.1

1

10

t

AV

, TIME IN AVALANCHE (ms)

FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

ELECTRONIC SWITCH OPENS

WHEN I

AS

IS REACHED

V

DS

L

+

CURRENT I

TRANSFORMER

AS

BV

DSS

t

P

I

AS

50Ω

+

V

DD

V

DS

V

DD

-

VARY t

P

TO OBTAIN

REQUIRED PEAK I

AS

V

GS

≤

20V

-

DUT

50V-150V

50Ω

t

AV

0V

t

P

FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 10. UNCLAMPED ENERGY WAVEFORMS

V

DD

t

ON

t

d(ON)

t

OFF

t

d(OFF)

t

r

t

f

90%

R

L

V

DS

V

GS

= 12V

DUT

0V

R

GS

V

DS

90%

10%

90%

V

GS

10%

50%

PULSE WIDTH

50%

FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT

FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

3-123

FSF450D

FSF450D Overview

Preview

FSF450D Related Products

Recommended Resources