CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
500
-
1.5
0.5
-
-
-
TYP
-
-
-
-
-
-
-
MAX
-
5.0
4.0
-
25
250
100
200
5.67
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 250V,
I
D
= 9A
-
-
-
-
-
I
D
= 9A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
0.425
-
-
-
-
-
-
110
-
21
49
7
3150
540
150
-
-
0.600
1.20
150
140
180
70
220
150
8.2
28
62
-
-
-
-
1.00
48
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 400V,
V
GS
= 0V
V
GS
=
±20V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 9A
I
D
= 6A,
V
GS
= 12V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= 250V, I
D
= 9A,
R
L
= 27.8Ω, V
GS
= 12V,
R
GS
= 2.35Ω
3-120
FSF450D, FSF450R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
I
SD
= 9A
I
SD
= 9A, dI
SD
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 400V
V
GS
= 12V, I
D
= 9A
V
GS
= 12V, I
D
= 6A
MIN
500
1.5
-
-
-
-
MAX
-
4.0
100
25
5.67
0.600
UNITS
V
V
nA
µA
V
Ω
TEST CONDITIONS
MIN
0.6
-
TYP
-
-
MAX
1.8
810
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
ION
SPECIES
Ni
Ni
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
26
37
37
37
TYPICAL
RANGE (µ)
43
43
36
36
36
APPLIED
V
GS
BIAS
(V)
-15
-20
-5
-10
-15
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
500
450
500
400
100
TEST
Single Event Effects Safe Operating
Area
SYMBOL
SEESOA
Typical Performance Curves
Unless Otherwise Specified
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LIMITING INDUCTANCE (HENRY)
600
500
400
V
DS
(V)
300
200
100
0
0
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
1E-3
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
TEMP = 25
o
C
-5
-10
V
GS
(V)
-15
-20
-25
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
3-121
FSF450D, FSF450R
Typical Performance Curves
12
Unless Otherwise Specified
(Continued)
100
T
C
= 25
o
C
10
I
D
, DRAIN CURRENT (A)
10
I
D
, DRAIN (A)
8
6
4
2
0
-50
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100ms
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100µs
1ms
10ms
1000
0
50
100
o
C)
T
C
, CASE TEMPERATURE (
150
0.1
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250µs, V
GS
= 12V, I
D
= 6A
NORMALIZED r
DS(ON)
12V
Q
G
2.0
1.5
Q
GS
Q
GD
1.0
V
G
0.5
0.0
CHARGE
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
10
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
NORMALIZED
THERMAL RESPONSE (Z
θ
JC
)
1
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.1
P
DM
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-3
10
-2
10
-1
10
0
10
1
0.001
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
TI power engineer with 25 years of work experience talks about WEBENCH design tools (Chinese) Showing you billions of complete power supply design options in seconds, this video will guide you how to ...
There are two 16-bit programmable timers/counters in the MCS-51 microcontroller. They have four working modes. Their control words and states are in the corresponding special function registers. By pr...
I started to get in touch with TI BLE technology by participating in the TI DAYS event. TI has always been a leader in many aspects, including BLT. It was the first to propose the practical concept of...
Now I want to implement the SNMP protocol on the switch. After reading some information, I am still confused and don't know how to start. Can anyone who has done it before please tell me what the spec...
[size=3]1. Phase-locked loop The meaning of phase-locked loop is the automatic control of phase synchronization. The automatic control closed-loop system that can complete the phase synchronization of...
A single-chip microcomputer is also called a single-chip microcontroller. It is not a chip that completes a certain logical function, but a computer system integrated into one chip. In general, a c...[Details]
1 Introduction
The high temperature tester is mainly used for temperature tracking measurement and data acquisition during the heating process. By systematically analyzing the test data, the...[Details]
Battery life is critical for portable applications. For applications such as smoke detectors, security devices, and thermostats, factory-installed batteries need to last for more than 10 years. The...[Details]
Product series: PB-B-RS232/485 interface (hereinafter sometimes referred to as "interface") is a product in the PROFIBUS bus bridge series.
The main purpose of the bridge series ...[Details]
With the rapid development of intelligent control technology, computers and information technology, the trend of information appliances IA (Information Application), computers and communications integ...[Details]
Today, with energy becoming increasingly scarce, the utilization of natural energy has become the focus of people's attention. Among various natural energies, the endless solar energy is highly fav...[Details]
Traditional
virtual instruments
consist of a data acquisition
board
based on PCI bus and
corresponding software. However, with
the rapid development of
computer
network techno...[Details]
0 Introduction
Ultrasonic waves
are mechanical waves with a frequency of more than 20KHz, and the propagation speed in the air is about 340 m/s (at 20°C). Ultrasonic waves can be gene...[Details]
Currently, high-frequency and high-efficiency DCDC converters are increasingly used in automotive electronic systems.
High switching frequency can use smaller power inductors and output filter...[Details]
1 Introduction
With the development of computer technology and information technology in the world, the global information age has arrived. All countries are formulating their own development p...[Details]
introduction
Belt drive is a common transmission device used in industrial production. Its commonly used speed detection device is a photoelectric encoder installed at the rotating end of th...[Details]
1 Introduction
Automatic Test
System The ATS (Automatic Test System) integrates all the stimulus and measurement equipment required for testing.
The computer
efficiently comp...[Details]
New Automobile
Hydraulic Clutch
The hydraulic control system uses almost 100% advanced engineering plastics, which overcomes the shortcomings of the main and branch cylinders of metal clutc...[Details]
TPMS is the abbreviation of "Tire Pressure Monitoring System". It is mainly used to automatically monitor the tire pressure in real time when the car is driving, and to alarm for tire leakage and l...[Details]
Various electronic and electromagnetic interference inside and outside the car often puts automotive electronic equipment in dangerous working conditions, degrading the performance of electronic eq...[Details]
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
