SPP80P06P
H
SIPMOS
®
Power-Transistor
Features
Product Summary
·
P-Channel
• P-Channel
Drain source voltage
• Enhancement mode
mode
·
Enhancement
Drain-source on-state resistance
• Avalanche rated
·
Avalanche rated
Continuous drain current
• dv/dt rated
·
• 175°C
dv/dt rated
temperature
operating
·
175°C operating temperature
• Pb-free lead plating; RoHs compliant
• Qualified according to AEC Q101
° Halogen-free according to IEC61249-2-21
V
DS
R
DS(on)
I
D
-60
0.023
-80
V
W
A
Pin 1
Type
SPP80P06P
H
PIN 2/4
D
PIN 3
S
Package
Lead free
G
PG-TO220-3
Yes
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Value
-80
-64
Unit
A
I
D
T
C =
25 °C,
1)
T
C
= 100 °C
Pulsed drain current
I
D puls
E
AS
E
AR
dv/dt
-320
823
34
6
kV/µs
T
C
= 25 °C
I
D
= -80 A ,
V
DD
= -25 V,
R
GS
= 25
W
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
Avalanche energy, single pulse
mJ
I
S
= -80 A,
V
DS
= -48 , di/dt = 200 A/µs,
T
jmax
= 175 °C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
340
-55...+175
55/175/56
V
W
°C
T
C
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1Current limited by bondwire; with an
R
thJC
= 0.4 K/W the chip is able to carry
I
= -91A
D
Rev 1.5
Page 1
2011-09-01
SPP80P06P
H
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
Values
typ.
-
-
-
-
max.
0.4
62
62
40
K/W
Unit
R
thJC
R
thJA
R
thJA
-
-
-
-
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
Symbol
min.
Values
typ.
-
-3
max.
-
-4
µA
-
-
-0.1
-10
-10
0.021
-1
-100
-100
0.023
nA
V
Unit
V
(BR)DSS
V
GS(th)
I
DSS
-60
-2.1
V
GS
= 0 V,
I
D
= -250 µA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -5.5 mA
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
GSS
R
DS(on)
-
-
V
GS
= -20 V,
V
DS
= 0 V
Drain-source on-state resistance
W
V
GS
= -10 V,
I
D
= -64 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.5
Page 2
2011-09-01
SPP80P06P
H
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Input capacitance
Values
typ.
max.
Unit
V
DS
³
2*I
D
*R
DS(on)max
,
I
D
= -64 A
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Output capacitance
g
fs
C
iss
C
oss
C
rss
t
d(on)
18
-
-
-
-
36
4026
1252
437
24
-
5033
1565
546
36
S
pF
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Turn-on delay time
ns
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -64 A,
R
G
= 1
W
Rise time
t
r
-
18
27
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -64 A,
R
G
= 1
W
Turn-off delay time
t
d(off)
-
56
84
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -64 A,
R
G
= 1
W
Fall time
t
f
-
30
45
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -64 A,
R
G
= 1
W
Rev 1.5
Page 3
2011-09-01
SPP80P06P
H
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Gate to source charge
Values
typ.
max.
Unit
Q
gs
Q
gd
Q
g
V
(plateau)
-
-
-
-
27.4
50
115
-6.2
41
75
173
-
nC
V
DD
= -48 V,
I
D
= -80 A
Gate to drain charge
V
DD
= -48 V,
I
D
= -80 A
Gate charge total
V
DD
= -48 V,
I
D
= -80 A,
V
GS
= 0 to -10 V
Gate plateau voltage
V
V
DD
= -48 V ,
I
D
= -80 A
Parameter
Reverse Diode
Inverse diode continuous forward current
Symbol
min.
Values
typ.
-
-
-1.2
117
420
max.
-80
-320
-1.6
175
630
Unit
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
A
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
ns
nC
V
GS
= 0 V,
I
F
= -80 A
Reverse recovery time
V
R
= -30 V,
I
F
=
I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= -30 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
Rev 1.5
Page 4
2011-09-01
SPP80P06P
H
Power dissipation
Drain current
P
tot
=
f
(T
C
)
SPP80P06P
I
D
=
f
(T
C
)
-90
parameter:
V
GS
³
10 V
SPP80P06P
360
W
280
240
A
-70
-60
P
tot
I
D
200
160
120
80
40
0
0
-50
-40
-30
-20
-10
0
0
100 120 140 160
°C
190
20
40
60
80
20
40
60
80
100 120 140 160
°C
190
T
C
T
C
Safe operating area
Transient thermal impedance
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
-10
3
SPP80P06P
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
1
SPP80P06P
K/W
A
t
p = 14.0µs
10
0
-10
2
Z
thJC
100 µs
10
-1
I
D
V
DS
/I
D
=
1 ms
10
-2
D = 0.50
0.20
10
-3
0.10
0.05
DS
(
on
)
-10
1
DC
R
10 ms
single pulse
10
-4
0.02
0.01
-10
0 -1
-10
-10
0
-10
1
V
-10
2
10
-5 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Rev 1.5
Page 5
t
p
2011-09-01
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