MMUN2111LT1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Features
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PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
•
Available in 8 mm embossed tape and reel.
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING
DIAGRAM
3
1
2
SOT−23
CASE 318
STYLE 6
1
A6x M
G
G
A6x
x
M
G
= Device Code
= A
−
L (Refer to page 2)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Lead
Junction and Storage,
Temperature Range
Symbol
P
D
Max
246 (Note 1)
400 (Note 2)
2.0 (Note 1)
3.2 (Note 2)
508 (Note 1)
311 (Note 2)
174 (Note 1)
208 (Note 2)
−55
to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
ORDERING INFORMATION
Device
MMUN21xxLT1
MMUN21xxLT1G
MMUN21xxLT3
MMUN21xxLT3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
R
qJA
R
qJL
T
J
, T
stg
SOT−23 10000/Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2008
December, 2008
−
Rev. 9
1
Publication Order Number:
MMUN2111LT1/D
MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Device*
MMUN2111LT1, G
MMUN2111LT3, G
MMUN2112LT1, G
MMUN2113LT1, G
MMUN2113LT3, G
MMUN2114LT1, G
MMUN2114LT3G
MMUN2115LT1, G
MMUN2116LT1, G
MMUN2130LT1, G (Note 3)
MMUN2131LT1, G (Note 3)
MMUN2132LT1, G
MMUN2133LT1, G
MMUN2134LT1, G (Note 3)
Package
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
Marking
A6A
A6B
A6C
A6D
A6E
A6F
A6G
A6H
A6J
A6K
A6L
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
Shipping
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
*The “G’’ suffix indicates Pb−Free package available.
3. New devices. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MMUN2111LT1, G
MMUN2112LT1, G
MMUN2113LT1, G
MMUN2114LT1, G
MMUN2115LT1, G
MMUN2116LT1, G
MMUN2130LT1, G
MMUN2131LT1, G
MMUN2132LT1, G
MMUN2133LT1, G
MMUN2134LT1, G
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
−
−
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
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2
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
250
PD , POWER DISSIPATION (MILLIWATTS)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= -25°C
75°C
0.1
200
25°C
150
100
R
qJA
= 625°C/W
50
0
-50
0
50
100
150
0.01
0
20
40
60
80
I
C
, COLLECTOR CURRENT (mA)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Figure 2. V
CE(sat)
versus I
C
4
V
CE
= 10 V
3
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
1000
h FE, DC CURRENT GAIN (NORMALIZED)
T
A
= 75°C
100
25°C
-25°C
Cob , CAPACITANCE (pF)
100
2
1
10
1
10
I
C
, COLLECTOR CURRENT (mA)
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
IC , COLLECTOR CURRENT (mA)
10
25°C
T
A
= -25°C
100
V
O
= 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
T
A
= -25°C
10
25°C
75°C
1
1
0.1
0.01
0.001
0
1
2
V
O
= 5 V
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
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