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MMBD7000

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size30KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MMBD7000 Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

MMBD7000 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging code3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresULTRA FAST
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current2 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MMBD7000
Discrete POWER & Signal
Technologies
MMBD7000
CONNECTION DIAGRAM
3
3
3
5C
2
1
2
SOT-23
1
2
1
High Conductance Ultra Fast Diode
Sourced from Process 1P. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
70
200
600
700
1.0
2.0
-55 to +150
150
Units
V
mA
mA
mA
A
A
°C
°C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
MMBD7000*
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
©1997
Fairchild Semiconductor Corporation
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