1N4933X0 datasheet, PDF - EEWORLD Datasheet

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1N4933X0: DescriptionRectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41,; CategoryDiscrete semiconductor diode; File Size257KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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1N4933X0 Overview

Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41,

1N4933X0 Parametric

Parameter Name	Attribute value
package instruction	O-PALF-W2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-41
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	50 V
Maximum reverse recovery time	0.2 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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1N4933 - 1N4937

1.0 AMP. Fast Recovery Rectifiers

DO-41

Features

High efficiency, Low VF

High current capability

High reliability

High surge current capability

Low power loss

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Mechanical Data

Cases: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Pure tin plated, lead free, solderable per

MIL-STD-202, Method 208 guaranteed

Polarity: Color band denotes cathode end

High temperature soldering guaranteed: 260℃/10s

/.375", (9.5mm) lead lengths at 5 lbs,

(2.3kg) tension

Weight: 0.34 grams

Ordering Information (example)

Part No.

1N4933

Package

DO-41

Packing

3K / AMMO box

INNER

TAPE

52mm

Packing

code

Green Compound

Packing code

A0G

Maximum Ratings and Electrical Characteristics

Rating at 25

℃

ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

Maximum Instantaneous Forward Voltage (Note 1)

@1A

Maximum DC Reverse Current at

Rated DC Blocking Voltage

@ T

=25

℃

@ T

=125

℃

Symbol

RRM

RMS

F(AV)

FSM

Trr

θjA

STG

4933

4934

100

4935

200

140

200

1.2

150

200

- 65 to + 150

4936

400

280

400

4937

600

420

600

Units

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

Note1: Pulse Test with PW=300 usec, 1% Duty Cycle

C/W

Note2: Reverse Recovery Test Conditions: IF=1.0A, IR=1.0A, IRR=0.25A

Note3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Version:D12

1N4933X0 Related Products

	1N4933X0	1N4933X0G	1N4934X0	1N4934X0G	1N4936X0	1N4936X0G	1N4935X0G	1N4935X0	1N4937X0	1N4937X0G
Description	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41,
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	50 V	50 V	100 V	100 V	400 V	400 V	200 V	200 V	600 V	600 V
Maximum reverse recovery time	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	-	-	O-PALF-W2	O-PALF-W2
Base Number Matches	1	1	1	1	1	1	1	1	-	-

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