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1N4934X0G

Description
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size257KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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1N4934X0G Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41,

1N4934X0G Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N4933 - 1N4937
1.0 AMP. Fast Recovery Rectifiers
DO-41
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed: 260℃/10s
/.375", (9.5mm) lead lengths at 5 lbs,
(2.3kg) tension
Weight: 0.34 grams
Ordering Information (example)
Part No.
1N4933
Package
DO-41
Packing
3K / AMMO box
INNER
TAPE
52mm
Packing
code
A0
Green Compound
Packing code
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
@ T
A
=25
@ T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θjA
T
J
T
STG
1N
4933
50
35
50
1N
4934
100
70
100
1N
4935
200
140
200
1
30
1.2
5
150
200
10
65
- 65 to + 150
- 65 to + 150
1N
4936
400
280
400
1N
4937
600
420
600
Units
V
V
V
A
A
V
uA
nS
pF
O
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test with PW=300 usec, 1% Duty Cycle
C/W
O
O
C
C
Note2: Reverse Recovery Test Conditions: IF=1.0A, IR=1.0A, IRR=0.25A
Note3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:D12

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Description Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41,
Reach Compliance Code compli compli compli compli compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 100 V 50 V 50 V 100 V 400 V 400 V 200 V 200 V 600 V 600 V
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 - - O-PALF-W2 O-PALF-W2
Base Number Matches 1 1 1 1 1 1 1 1 - -
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