The DG2731/2732/2733 are low voltage, low on-resis-
tance, dual single-pole/double-throw (SPDT) mono-
lithic CMOS analog switches designed for high
performance switching of analog signals. Combining
low-power, high speed, low on-resistance, and small
package size, the DG2731/2732/2733 are ideal for
portable and battery power applications.
The DG2731/2732/2733 have an operation range from
1.6 V to 4.3 V single supply. The DG2731 and DG2732
have two separate control pins with reverse control
logic. The DG2733 has an EN pin to enable the device
when the logic is high.
The DG2731/2732/2733 are 1.6-V logic compatible,
allowing the easy interface with low voltage DSP or
MCU control logic and ideal for one cell Li-ion battery
direct power.
The switch conducts signals within power rails equally
well in both directions when on, and blocks up to the
power supply level when off. Break-before-make is
guaranteed.
The DG2731/2732/2733 are built on Vishay Siliconix's
sub micron CMOS low voltage process technology and
provides greater than 300 mA latch-up protection, as
tested per JESD78.
As a committed partner to the community and the envi-
ronment, Vishay Siliconix manufactures this product
with lead (Pb)-free device terminations. DG2731/2732/
2733 are offered in a DFN or MSOP package. The
DFN package has a nickel-palladium-gold device ter-
mination and is represented by the lead (Pb)-free "-E4"
suffix. The MSOP package uses 100% matte Tin
device termination and is represented by the lead (Pb)-
free "-E3" suffix. Both the matte Tin and nickel-palla-
dium-gold device terminations meet all JEDEC stan-
dards for reflow and MSL ratings.
FEATURES
•
•
•
•
Low Voltage Operation (1.65 V to 4.3 V)
Low On-Resistance - r
ON
: 0.3
Ω@
3.6 V
Fast Switching: T
ON
= 50 ns @ 4.3 V
T
OFF
= 14 ns @ 4.3 V
•
Latch-Up Current > 300 mA (JESD78)
RoHS
COMPLIANT
BENEFITS
•
Reduced Power Consumption
• High Accuracy
• Reduce Board Space
• TTL/1.6-V Logic Compatible
APPLICATIONS
•
Cellular Phones
• Speaker Headset Switching
• Audio and Video Signal Routing
• PCMCIA Cards
•
Battery Operated Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN
CONFIGURATION
Document Number: 73484
S-51920–Rev. A, 12-Sep-05
www.vishay.com
1
DG2731/2732/2733
Vishay Siliconix
TRUTH TABLE
Logic
0
1
0
1
EN (DG2733 only)
1
1
0
0
NC1, 2
ON
OFF
OFF
OFF
NO1, 2
OFF
ON
OFF
OFF
–40 to 85°C
DFN–10
MSOP–10
ORDERING INFORMATION
Temp Range
Package
Part Number
DG2731DQ–T1–E3
DG2732DQ–T1–E3
DG2733DQ–T1–E3
DG2731DN–T1–E4
DG2732DN–T1–E4
DG2733DN–T1–E4
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
IN, COM, NC, NO
a
Current (Any terminal except NO, NC or COM)
Continuous Current (NO, NC, or COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
10–PIN MSOP
Package Solder Reflow Conditions
d
10–PIN DFN
Power Dissipation (Packages)
b
MSOP–10
c
DFN–10
d
Reference to GND
V+
Symbol
Limit
–0.3 to 5.0
–0.3 to (V
+
+ 0.3)
30
±250
±500
–65 to 150
Unit
V
mA
°C
320
1191
mW
Notes
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/C above 70°C
d. Derate 14.9 mW/C above 70°C
e. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS (V+ = 1.8 V)
Test Condition
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Full
1.0
µA
V
INH
V
INL
C
in
Full
Full
Full
4
1.4
0.4
V
pF
V
NO
, V
NC
,
V
COM
r
ON
V+ = 1.8 V, V
COM
= 0.9 V, I
NO
, I
NC
= 100 mA
Full
Room
Full
0
0.7
V+
1.0
1.2
V
Ω
Symbol
V+ = 1.8 V, V
IN
= 0.4 or 1.4 V
e
Temp
a
Min
b
Limits
–40 to 85°C
Typ
c
Max
b
Unit
www.vishay.com
2
Document Number: 73484
S-51920–Rev. A, 12-Sep-05
DG2731/2732/2733
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Condition
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
V+ = 2.7 V, V
COM
= 0.5 V, I
NO
, I
NC
= 100 mA
On-Resistance
r
ON
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 100 mA
V+ = 2.7 V, V
COM
= 0.5 to 1.5 V,
I
NO
, I
NC
= 100 mA
V+ = 3.3 V, V
NO
, V
NC
= 0.3 V / 4.0 V,
V
COM
= 3.0 V / 0.3 V
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 3.0 V / 0.3 V
Full
Room
Full
r
ON
Match
d
∆r
ON
I
NO(off)
,
I
NC(offF)
I
COM(off)
Channel-On Leakage
Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
N
O
, N
C
Off Capacitance
d
Channel On Capacitance
d
Power Supply
Power Supply Range
Power Supply Current
Turn-On Time
DG2733 (EN)
Turn-Off Time
DG2733 (EN)
V+
I+
t
ON(EN)
t
OFF(EN)
V
IN
= 0 or V+
V+ = 3.6 V
V
NO
or V
NC
= 1.5 V, R
L
= 50
Ω,
C
L
= 35 pF
Full
Room
Full
Room
Full
79
17
2.7
3.3
1.0
105
135
29
35
V
µA
t
ON
t
OFF
t
BBM
Q
INJ
O
IRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
V
IN
= 0 or V+, f = 1 MHz
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF, f = 100 kHz
V+ = 3.6 V
V
NO
or V
NC
= 1.5 V, R
L
= 50
Ω,
C
L
= 35 pF
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
10
9
–75
–75
104
104
230
230
pF
pC
dB
85
17
110
140
30
35
ns
V
INH
V
INL
C
in
I
INL
or I
INH
V
IN
= 0 or V+
Full
Full
Full
Full
–1
5
1
1.4
0.5
V
pF
µA
I
COM(on)
Room
Room
Full
Room
Full
Room
Full
–1
–10
–1
–10
–1
–10
0.03
0
0.35
0.3
V+
0.45
0.6
0.06
1
10
1
10
1
10
nA
Ω
V
Symbol
V+ = 3 V, ±10 %, V
IN
= 0.5 or 1.4 V
e
Temp
a
Min
b
Limits
–40 to 85°C
Typ
c
Max
b
Unit
Switch Off Leakage Current
ns
Document Number: 73484
S-51920–Rev. A, 12-Sep-05
www.vishay.com
3
DG2731/2732/2733
Vishay Siliconix
SPECIFICATIONS (V+ = 4.3 V)
Test Condition
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
V+ = 4.3 V, V
COM
= 0.9 V, I
NO
, I
NC
= 100 mA
On-Resistance
r
ON
V+ = 4.3 V, V
COM
= 2.5 V, I
NO
, I
NC
= 100 mA
V+ = 4.3 V, V
COM
= 0. 9 to 2.5 V+,
I
NO
, I
NC
= 100 mA
V+ = 4.3 V, V
NO
, V
NC
= 0.3 V / 4.0 V,
V
COM
= 4.0 V / 0.3 V
V+ = 4.3 V, V
NO
, V
NC
= V
COM
= 3.0 V / 4.0 V
Full
Room
Full
r
ON
Match
d
Switch Off Leakage
Current
d
Channel-On Leakage
Current
d
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Break-Before-Make Time
Power Supply
Power Supply Range
Power Supply Current
V+
I+
V
IN
= 0 or V+
Full
4.3
1.0
V
µA
t
BBM
V
NO
or V
NC
= 1.5 V, R
L
= 50
Ω,
C
L
= 35 pF
Full
5
ns
V
IN
V
INL
C
in
I
INL
or I
INH
V
IN
= 0 or V+
Full
Full
Full
Full
–1
–4
1
1.6
0.5
V
pF
µA
∆r
ON
I
NO(off)
,
I
NC(off)
I
COM(off)
I
COM(on)
Room
Full
Full
Full
–20
–20
–20
0.03
0
0.29
0.21
V+
0.4
0.55
0.06
20
20
20
nA
Ω
V
Symbol
V+ = 4.3 V, V
IN
= 0.5 or 1.6 V
e
Temp
a
Min
b
Limits
–40 to 85°C
Typ
c
Max
b
Unit
Notes
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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