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DMA502010R

Description
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm
CategoryDiscrete semiconductor    The transistor   
File Size653KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm

DMA502010R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F5
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON BASE, 2 ELEMENTS
Minimum DC current gain (hFE)210
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
DMA50201
Silicon PNP epitaxial planar type
For general amplification
DMA20201 in SMini5 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: A5
Basic Part Number
Dual DSA2001 (Common Base)
Packaging
DMA502010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Tr1
Tr2
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
opr
T
stg
Rating
–60
–50
–7
–100
–200
150
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
1: Emitter (Tr1)
2: Base (Common)
3: Emitter (Tr2)
Panasonic
JEITA
Code
(C1)
5
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-F3-B
SC-113CB
SOT-353
(C2)
4
Tr1
Tr2
1
(E1)
2
(B)
3
(E2)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
FE
ratio
*1
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE
(Small/Large)
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
I
E
= –10 µA, I
C
= 0
V
CB
= –20 V, I
E
= 0
V
CE
= –10 V, I
B
= 0
V
CE
= –10 V, I
C
= –2 mA
V
CE
= –10 V, I
C
= –2 mA
I
C
= –100 mA, I
B
= –10 mA
V
CE
= –10 V, I
C
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
210
0.50
0.99
– 0.2
150
2
– 0.5
Min
–60
–50
–7
– 0.1
–100
460
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
Publication date: December 2013
Ver. DED
1

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