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V35PW45-M3-I

Description
USB Interface IC USB HS to UART/FIFO SPI/JTAG/I2C LQFP-48
Categorysemiconductor    Discrete semiconductor   
File Size118KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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V35PW45-M3-I Overview

USB Interface IC USB HS to UART/FIFO SPI/JTAG/I2C LQFP-48

V35PW45-M3-I Parametric

Parameter NameAttribute value
Product CategorySchottky Diodes & Rectifiers
ManufacturerVishay
RoHSDetailsyfbvvdquzcuzcxwfytf
ProductSchottky Rectifiers
Mounting StyleSMD/SMT
Package / CaseDPAK-2
If - Forward Current35 A
Vrrm - Repetitive Reverse Voltage45 V
Vf - Forward Voltage540 mV
Ifsm - Forward Surge Current260 A
ConfigurationSingle Dual Anode
TechnologySi
Ir - Reverse Current2.5 mA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity4500
Vr - Reverse Voltage45 V
Unit Weight0.007055 oz
V35PW45
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.27 V at I
F
= 5 A
FEATURES
• Very low profile - typical height of 1.3 mm
TMBS
®
eSMP
®
Series
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
1
2
SlimDPAK
(TO-252AE)
PIN 1
PIN 2
K
HEATSINK
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 35 A (T
A
= 125 °C)
T
J
max.
Package
Circuit configuration
35 A
45 V
260 A
0.46 V
150 °C
SlimDPAK (TO-252AE)
Single
MECHANICAL DATA
Case:
SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction temperature range
Storage temperature range
V
RRM
I
F(AV) (1)
I
FSM
T
J (2)
T
STG
SYMBOL
V35PW45
V35PW45
45
35
260
-40 to +150
-55 to +150
V
A
A
°C
°C
UNIT
Notes
(1)
With infinite heatsink
(2)
The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
θJA
Revision: 01-Jun-17
Document Number: 87652
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

V35PW45-M3-I Related Products

V35PW45-M3-I V35PW45HM3-I
Description USB Interface IC USB HS to UART/FIFO SPI/JTAG/I2C LQFP-48 Fixed Inductors WE-HCI Flat SMD 5040 3.3uH 5.75A 18.5mOhm
Product Category Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
Manufacturer Vishay Vishay
RoHS Detailsyfbvvdquzcuzcxwfytf Details
Product Schottky Rectifiers Schottky Rectifiers
Mounting Style SMD/SMT SMD/SMT
Package / Case DPAK-2 TO-252AE-3
If - Forward Current 35 A 35 A
Vrrm - Repetitive Reverse Voltage 45 V 45 V
Vf - Forward Voltage 540 mV 540 mV
Ifsm - Forward Surge Current 260 A 260 A
Configuration Single Dual Anode Single Dual Anode
Technology Si Si
Ir - Reverse Current 2.5 mA 2.5 mA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 150 C + 150 C
Factory Pack Quantity 4500 4500
Vr - Reverse Voltage 45 V 45 V
Unit Weight 0.007055 oz 0.000705 oz
Packaging Reel Reel
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