GBPC 12, 15, 25, 35 SERIES
Discrete POWER & Signal
Technologies
GBPC 12, 15, 25, 35 SERIES
Features
•
Integrally molded heatsink
provided very low thermal
resistance for maximum
heat dissipation.
Surge overload rartings
from 300 amperes to
400 amperes.
Isolated voltage from case
to lead over 2500 volts.
H OL E F OR #10 SCR EW
0.22(5.59)
0.20(5.08)
D IA
1.14(29.0)
1.12(28.5)
0.692(17.6)
0.612(15.5)
GBPC
0.25(6.35)
1.14(29.0)
1.12(28.5)
0.692(17.6)
0.612(15.5)
+
~
~
–
0.752(19.1)
0.672(17.1)
•
0.602(15.3)
0.522(13.3)
0.442(11.23)
0.432(10.97)
•
0.96(24.5)
0.85(21.5)
H OLE FOR #10 SCR EW
0.22(5.59)
0.20(5.08)
D IA
1.14(29.0)
1.12(28.5)
0.752(19.1)
0.672(17.1)
Suffix "W"
Wire Lead Structure
–
GBPC-W
1.14(29.0)
1.12(28.5)
Suffix "M"
Terminal Location
Face to Face
~
0.752(19.1)
0.672(17.1)
0.442(11.23)
0.432(10.97)
0.042(1.07)
0.038(0.97)
~
1.2(30.5)
MI N
+
Dimensions are in:
inches (mm)
0.490(12.4)
0.410(10.4)
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
Averag e Rectified Curr
@ T
A
= 55°C
en t
T
A
= 25°C unless otherwise noted
Parameter
GBPC
12
GBPC
15
GBPC
25
GBPC
35
Value
12
15
25
35
300
400
83.3
666
1.5
-55 to +150
Units
A
A
A
A
A
A
W
m W/°C
°C/W
°C
°C
i
f(surge)
P
D
R
θJL
T
stg
T
J
Peak F or w ard Surge C u rrent
GBPC 15, 25
12,
8.3 m s single half- sine- w a ve
Superimposed on rate d load (JEDEC method
GBPC35
)
Total D evice Dissipati on
Derate a bove 2
°C
5
Ther m al Resistance, J u nction to Lead
Storag e Tem perature
Range
Operati n g Junction Temperature
-55 to +150
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
©1999
Fairchild Semiconductor Corporation
GBPC 12, 15, 25, 35 SERIES ,v. A
Re
GBPC 12, 15, 25, 35 SERIES
Glass Passivated Bridge Rectifiers
(continued)
Electrical Characteristics
Parameter
005
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage Drop,
per bridge @ 6.0 A
GBPC12
@ 7.5 A
GBPC15
@ 12.5 A
GBPC25
@ 17.5 A
GBPC35
I
2
t rating for fusing
GBPC12,15,25
t < 8.3 ms
GBPC35
Typical Junction Capacitance, per leg
V
R
= 4.0V,
GBPC12,15,25
f = 1.0 MHz
GBPC35
50
35
50
T
A
= 25°C unless otherwise noted
Device
01
100
70
100
02
200
140
200
04
400
280
400
5.0
500
06
600
420
600
08
800
560
800
10
1000
700
1000
Units
V
V
V
µA
µA
1.1
V
A
2
Sec
A
2
Sec
pF
pF
375
660
180
200
Typical Characteristics
Forward Current Derating Curve
40
GBPC35
Non-Repetitive Surge Current
PEAK FORWARD SURGE CURRENT (A)
400
FORWARD CURRENT (A)
30
GBPC25
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
200
GBPC35
20
GBPC12-GBPC15
100
GBPC12-GBPC25
10
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (
º
C)
175
20
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
Forward Characteristics
200
100
FORWARD CURRENT (A)
GBPC25
GBPC12-GBPC15
GBPC35
Reverse Characteristics
100
REVERSE CURRENT (
µ
A)
T
A
= 125
º
C
10
10
1
T
A
= 25
º
C
Pulse Width = 300µs
2% Duty Cycle
1
T
A
= 25
º
C
0.1
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
1.8
2
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
GBPC 12, 15, 25, 35 SERIES , Rev. A
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not intended to be an exhaustive list of all such trademarks.
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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First Production
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The datasheet is printed for reference information only.
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