TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/276
Devices
2N2323
2N2323S
2N2323A
2N2323AS
2N2324
2N2324S
2N2324A
2N2324AS
2N2326
2N2326S
2N2326A
2N2326AS
2N2328
2N2328S
2N2328A
2N2328AS
Qualified
Level
2N2329
2N2329S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Sym
2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/
2N2329,S Unit
2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S
Reverse Voltage
V
RM
50
100
200
300
400
Vdc
Working Peak Reverse Voltage V
RM
75
150
300
400
500
Vpk
(3/4)
(3/4)
(3/4)
(3/4)
(3)
Forward Blocking Voltage
V
FBXM
50
100
200
300
400
Vpk
(1)
Average Forward Current
I
O
0.22
Adc
(2)
Forward Current Surge Peak
I
FSM
15
Adc
Cathode-Gate Current
V
KGM
6
Vpk
0
Operating Temperature
T
op
-65 to +125
C
0
Storage Junction Temp
T
stg
-65 to +150
C
0
1) This average forward current is for an ambient temperature of 80 C and 180 electrical degrees of
conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during
the first 5
µs
after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
TO-5
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
SUBGROUP 2 TESTING
Reverse Blocking Current
R
2
= 1 kµ
R
2
= 2 kµ
V
R
= 50 Vdc
V
R
= 100 Vdc
V
R
= 200 Vdc
V
R
= 300 Vdc
V
R
= 400 Vdc
2N2323 thru 2N2329
2N2323S thru 2N2329S
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S,
I
RBX1
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Forward Blocking Current
R
2
= 1 kΩ
R
2
= 2 kΩ
V
R
= 50 Vdc
V
R
= 100 Vdc
V
R
= 200 Vdc
V
R
= 300 Vdc
V
R
= 400 Vdc
Reverse Gate Current
V
KG
= 6 Vdc
Gate Trigger Voltage and Current
V
2
= V
FBX
= 6 Vdc; R
L
= 100
Ω
R
e
= 1 kΩ
R
e
= 2 kΩ
2N2323 thru 2N2329
2N2323S thru 2N2329S
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S
Symbol
Min.
Max.
Unit
I
FBX1
10
µAdc
I
KG
200
µAdc
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
V
GT1
I
GT1
V
GT1
I
GT1
0.35
0.35
0.80
200
0.60
20
Vdc
µAdc
Vdc
µAdc
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise T
A
= 125
0
C
50
Ω ≤
R
L
≤
400
Ω,
C = 0.1 to 1.0
µF,
repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/µs, R
3
= 1 kΩ
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
dv/dt = 0.7 v/µs, R
3
= 2 kΩ
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
V
FBX
47
95
190
285
380
V
FM
2.2
V(pk)
Vdc
V
AA
= 50 Vdc
2N2323, S, A, AS
V
AA
= 100 Vdc
2N2324, S, A, AS
V
AA
= 200 Vdc
2N2326, S, A, AS
V
AA
= 300 Vdc
2N2328, S, A, AS
V
AA
= 400 Vdc
2N2329, S
Forward “on” Voltage
i
FM
= 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
Holding Current
V
AA
= 24 Vdc max, I
F1
= 100 mAdc, I
F2
= 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25
µs
min., R
2
= 330
Ω
R
3
= 1 kΩ
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R
3
= 2 kΩ
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
I
HOX
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
Electronics Design Contest
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