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MBR20060CTR

Description
Schottky Diodes u0026 Rectifiers 60V 200A Schottky Recovery
CategoryDiscrete semiconductor    diode   
File Size454KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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MBR20060CTR Overview

Schottky Diodes u0026 Rectifiers 60V 200A Schottky Recovery

MBR20060CTR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGeneSiC
package instructionR-PUFM-X2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationPOWER
Shell connectionANODE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JESD-30 codeR-PUFM-X2
Maximum non-repetitive peak forward current1500 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-40 °C
Maximum output current100 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage60 V
Maximum reverse current5000 µA
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
MBR20045CT thru MBR200100CTR
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V
RRM
• Not ESD Sensitive
Twin Tower Package
V
RRM
= 45 V - 100 V
I
F(AV)
= 200 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R)
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
57
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge
current (per leg)
Maximum forward
voltage (per leg)
Reverse current at rated
DC blocking voltage
(per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 100 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R)
200
1500
0.70
1
10
30
200
1500
0.75
1
10
30
200
1500
0.84
1
10
30
200
1500
0.84
1
10
30
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance,
junction-case,
per leg
R
ΘJC
0.45
0.45
0.45
0.45
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1

MBR20060CTR Related Products

MBR20060CTR MBR20045CT
Description Schottky Diodes u0026 Rectifiers 60V 200A Schottky Recovery Development Boards u0026 Kits - ARM
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker GeneSiC GeneSiC
package instruction R-PUFM-X2 R-PUFM-X2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
application POWER POWER
Shell connection ANODE CATHODE
Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.75 V 0.65 V
JESD-30 code R-PUFM-X2 R-PUFM-X2
Maximum non-repetitive peak forward current 1500 A 1500 A
Number of components 2 2
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 100 A 100 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 60 V 45 V
Maximum reverse current 5000 µA 5000 µA
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
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