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CJD122-TR

Description
Darlington Transistors DARLINGTON 100V 8A
Categorysemiconductor    Discrete semiconductor   
File Size630KB,3 Pages
ManufacturerCentral Semiconductor
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CJD122-TR Overview

Darlington Transistors DARLINGTON 100V 8A

CJD122-TR Parametric

Parameter NameAttribute value
Product CategoryDarlington Transistors
ManufacturerCentral Semiconductor
RoHSDetails
ConfigurationSingle
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max100 V
Emitter- Base Voltage VEBO5 V
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current8 A
Maximum Collector Cut-off Current10 uA
Mounting StyleSMD/SMT
Package / CaseDPAK
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
DC Collector/Base Gain hfe Min100, 1000
Height2.75 mm
Length6.8 mm
Minimum Operating Temperature- 65 C
Factory Pack Quantity2500
Width5.7 mm
Unit Weight0.009185 oz
CJD122 NPN
CJD127 PNP
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122 and
CJD127 are complementary silicon power Darlington
transistors manufactured in a surface mount package
designed for low speed switching and amplifier
applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ
JC
Thermal Resistance
Θ
JA
ELECTRICAL
SYMBOL
ICEO
ICEV
ICEV
ICBO
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
fT
Cob
Cob
hfe
CHARACTERISTICS:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCE=50V
VCE=100V, VBE(off)=1.5V
VCE=100V, VBE(off)=1.5V, TC=125°C
VCB=100V
VEB=5.0V
IC=30mA
100
IC=4.0A, IB=16mA
IC=8.0A, IB=80mA
IC=8.0A, IB=80mA
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=4.0A
1000
VCE=4.0V, IC=8.0A
100
VCE=4.0V, IC=3.0A, f=1.0MHz
4.0
VCB=10V, IE=0, f=1.0MHz (CJD122)
VCB=10V, IE=0, f=1.0MHz (CJD127)
VCE=4.0V, IC=3.0A, f=1.0kHz
100
100
5.0
8.0
16
120
20
1.75
-65 to +150
6.25
71.4
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
MAX
10
10
500
10
2.0
2.0
4.0
4.5
2.8
12000
UNITS
μA
μA
μA
μA
mA
V
V
V
V
V
200
300
300
MHz
pF
pF
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