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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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BUK7E07-55B
N-channel TrenchMOS standard level FET
Rev. 01 — 29 January 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC standard for use in Automotive critical
applications.
1.2 Features
I
Very low on-state resistance
I
175
°C
rated
I
Q101 compliant
I
Standard level compatible
1.3 Applications
I
Automotive systems
I
Motors, lamps and solenoids
I
General purpose power switching
I
12 V and 24 V loads
1.4 Quick reference data
I
E
DS(AL)S
≤
351 mJ
I
I
D
≤
75 A
I
R
DSon
= 5.8 mΩ (typ)
I
P
tot
≤
203 W
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base; connected to drain (D)
mbb076
Simplified outline
mb
Symbol
D
G
S
1 2 3
SOT226 (I2PAK)
NXP Semiconductors
BUK7E07-55B
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Package
Name
BUK7E07-55B
I2PAK
Description
Version
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
T
mb
= 25
°C;
V
GS
= 10 V; see
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V; see
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
peak reverse drain current
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
Unclamped inductive load; I
D
= 75 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
Ω;
starting at
T
j
= 25
°C
Repetitive rating defined in
Figure 16
[3]
[2]
[1]
[2]
[2]
Conditions
R
GS
= 20 kΩ
Min Max
-
-
-
-
-
-
-
55
55
±20
119
75
75
478
203
Unit
V
V
V
A
A
A
A
W
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
see
Figure 3
T
mb
= 25
°C;
see
Figure 1
−55
+175
°C
−55
+175
°C
-
-
-
75
478
351
A
A
mJ
Source-drain diode
Avalanche ruggedness
E
DS(AL)R
-
-
J
[1]
[2]
[3]
Current is limited by chip power dissipation rating.
Continuous current is limited by package.
Conditions:
a) Maximum value not quoted.
b) Single-pulse avalanche rating limited by T
j(max)
of 175
°C.
c) Repetitive avalanche rating limited by an average junction temperature of 170
°C.
d) Refer to application note
AN10273
for further information.
BUK7E07-55B_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 January 2008
2 of 12
NXP Semiconductors
BUK7E07-55B
N-channel TrenchMOS standard level FET
120
P
der
(%)
80
003aab844
120
I
D
(A)
80
(1)
003aac120
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
P
tot
P
der
=
-----------------------
×
100
%
-
P
tot
(
25°C
)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10
3
I
D
(A)
10
2
(1)
V
GS
≥
10 V
(1) Capped at 75 A due to package.
Fig 2. Continuous drain current as a function of
mounting base temperature
003aac121
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
µs
100
µs
1 ms
10
10 ms
DC
100 ms
1
10
−1
1
10
V
DS
(V)
10
2
T
mb
= 25
°C;
I
DM
is single pulse.
(1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7E07-55B_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 January 2008
3 of 12
NXP Semiconductors
BUK7E07-55B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
vertical in still air
Min
-
-
Typ
-
60
Max
0.74
-
Unit
K/W
K/W
thermal resistance from junction to mounting base -
1
Z
th(j-mb)
(K/W)
10
−1
δ
= 0.5
0.2
0.1
0.05
0.02
10
−2
single pulse
P
003aac122
δ
=
t
p
T
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7E07-55B_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 January 2008
4 of 12
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