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MURT10010R

Description
100V 100A Silicon Super Fast Recovery Rectifier in Three Tower Package
CategoryDiscrete semiconductor    diode   
File Size352KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance  
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MURT10010R Overview

100V 100A Silicon Super Fast Recovery Rectifier in Three Tower Package

MURT10010R Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid8183984623
package instructionR-PUFM-X3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PUFM-X3
Maximum non-repetitive peak forward current1500 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current50 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage100 V
Maximum reverse current25 µA
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
MURT10005 thru MURT10020R
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V V
RRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Three Tower Package
V
RRM
= 50 V - 200 V
I
F(AV)
= 100 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MURT10005(R)
50
35
50
-55 to 150
-55 to 150
MURT10010(R)
100
71
100
-55 to 150
-55 to 150
MURT10020(R)
200
141
200
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Maximum reverse recovery
time (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 140 °C
t
p
= 8.3 ms, half sine
I
FM
= 50 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MURT10005(R)
100
1500
1.0
25
1
75
MURT10010(R)
100
1500
1.0
25
1
75
MURT10020(R)
100
1500
1.0
25
1
75
Unit
A
A
V
μA
mA
nS
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R
ΘJC
1.0
1.0
1.0
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1

MURT10010R Related Products

MURT10010R MURT10005R MURT10020R MURT10020
Description 100V 100A Silicon Super Fast Recovery Rectifier in Three Tower Package 50V 100A Silicon Super Fast Recovery Rectifier in Three Tower Package Rectifiers SI S-FST RECOV 3TWR 50-600V100A200P/141R Rectifiers SI S-FST RECOV 3TWR 50-600V100A200P/141R
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
package instruction R-PUFM-X3 R-PUFM-X3 R-PUFM-X3 R-PUFM-X3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
application SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V
JESD-30 code R-PUFM-X3 R-PUFM-X3 R-PUFM-X3 R-PUFM-X3
Maximum non-repetitive peak forward current 1500 A 1500 A 1500 A 1500 A
Number of components 2 2 2 2
Phase 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 50 A 50 A 50 A 50 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 100 V 50 V 200 V 200 V
Maximum reverse current 25 µA 25 µA 25 µA 25 µA
Maximum reverse recovery time 0.075 µs 0.075 µs 0.075 µs 0.075 µs
surface mount NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER
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