MURT10005 thru MURT10020R
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V V
RRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Three Tower Package
V
RRM
= 50 V - 200 V
I
F(AV)
= 100 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MURT10005(R)
50
35
50
-55 to 150
-55 to 150
MURT10010(R)
100
71
100
-55 to 150
-55 to 150
MURT10020(R)
200
141
200
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Maximum reverse recovery
time (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 140 °C
t
p
= 8.3 ms, half sine
I
FM
= 50 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MURT10005(R)
100
1500
1.0
25
1
75
MURT10010(R)
100
1500
1.0
25
1
75
MURT10020(R)
100
1500
1.0
25
1
75
Unit
A
A
V
μA
mA
nS
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R
ΘJC
1.0
1.0
1.0
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1
MURT10005 thru MURT10020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
GeneSiC Semiconductor
:
MURT10005 MURT10005R MURT10010 MURT10010R MURT10020 MURT10020R