TPC6201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6201
HDD Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
·
·
·
·
Low drain-source ON resistance: R
DS (ON)
= 80 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 3.8 S (typ.)
Low leakage current: I
DSS
=
10
µA (max) (V
DS
= 30 V)
Enhancement-model: V
th
=
1.3
to 2.5 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain
current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
(1)
P
D
(2)
P
D
(1)
P
D
(2)
E
AS
I
AR
(Note 5)
E
AR
T
ch
T
stg
Rating
30
30
±20
2.5
10
0.9
W
0.76
0.4
W
0.31
1.0
1.25
0.16
150
-55
to 150
mJ
A
mJ
°C
°C
1
2
3
Unit
V
V
V
A
Drain power Single-device operation
(Note 3a)
dissipation
(t
=
5 s)
Single device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t
=
5 s)
Single device value at
(Note 2b) dual operation (Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-3T1B
Weight: 0.011 g (typ.)
Circuit Configuration
6
5
4
Thermal Characteristics
Marking (Note 6)
Characteristics
Symbol
Max
139
°C/W
165
310
°C/W
400
Unit
Single-device operation
R
th (ch-a)
(2)
Thermal Resistance
(Note 3a)
(channel-to-ambient)
(t
=
5 s)
(Note 2a) Single device value at
R
(2)
dual operation (Note 3b)
th (ch-a)
Single-device operation
R
th (ch-a)
(2)
Thermal Resistance
(Note 3a)
(channel-to-ambient)
(t
=
5 s)
(Note 2b) Single device value at
R
th (ch-a)
(2)
dual operation (Note 3b)
S4A
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page.
This transistor is an electrostatically sensitive device. Please handle it with caution.
1
2002-01-17
TPC6201
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-ON time
Switching time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
f
t
off
Q
g
Q
gs
Q
gd
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
V
GS
t
on
10 V
0V
4.7
W
I
D
=
1.3 A
V
OUT
R
L
=
11.5
W
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
=
30 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
I
D
=
10 mA, V
GS
= -20
V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
4.5 V, I
D
=
1.3 A
V
GS
=
10 V, I
D
=
1.3 A
V
DS
=
10 V, I
D
=
1.3 A
Min
¾
¾
30
15
1.3
¾
¾
1.25
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
¾
¾
¾
¾
¾
128
80
3.8
170
25
40
2.4
8
2
11
4.7
3.4
1.3
Max
±10
10
¾
¾
2.5
145
95
¾
¾
¾
¾
¾
¾
ns
¾
¾
¾
¾
¾
nC
pF
Unit
mA
mA
V
V
mW
S
Duty
<
1%, t
w
=
10
ms
=
V
DD
~
15 V
-
~
V
DD
-
24 V, V
GS
=
10 V,
I
D
=
2.5 A
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Pulse drain reverse current
Forward voltage (diode)
(Note 1)
Symbol
I
DRP
V
DSF
Test Condition
¾
I
DR
=
2.5 A, V
GS
=
0 V
Min
¾
¾
Typ.
¾
¾
Max
10
-1.2
Unit
A
V
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t
=
5 s)
(b) Device mounted on a glass-epoxy board (b) (t
=
5 s)
FR-4
25.4
´
25.4
´
0.8
Unit: (mm)
FR-4
25.4
´
25.4
´
0.8
Unit: (mm)
(a)
(b)
Note 3: (a) Single-device operation; values of P
D
(1) and R
th (ch-a)
(1) for a single device during single-device
operation
(b) Dual operation; values of P
D
(2) and R
th (ch-a)
(2) for a single device during dual operation
Note 4: V
DD
=
24 V, T
ch
=
25°C (initial), L
=
0.5 mH, R
G
=
25
W,
I
AR
=
1.25 A
Note 5: Repetitive rating; pulse width limited by maximum channel temperature
Note 6: Black round marking
“·”
locates on the left lower side of parts number marking “S4A” indicates terminal
No.1.
2
2002-01-17
TPC6201
I
D
– V
DS
5
Common source
Ta
=
25°C
Pulse test
8
10
6
10
10
8
8
6
I
D
– V
DS
5
Common source
Ta
=
25°C Pulse test
4.5
4
(A)
(A)
4.5
I
D
3
3.5
2
3
1
VGS
=
2.5 V
0
0
0.1
0.2
0.3
0.4
0.5
I
D
6
4
Drain current
Drain current
4
3.5
2
3
VGS
=
2.5 V
0
0
1
2
3
4
5
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
5
Common source
VDS
=
10 V
Pulse test
1.0
V
DS
– V
GS
Common source
Ta
=
25°C
Pulse test
(V)
V
DS
Drain-source voltage
4
0.8
I
D
(A)
3
0.6
Drain current
2
Ta
= -55°C
0.4
ID
=
2.5 A
0.2
0.6 A
1.2 A
1
100°C
25°C
0
0
1
2
3
4
5
0
0
2
4
6
8
10
Gate-source voltage
V
DS
(V)
Gate-source voltage
V
GS
(V)
|Y
fs
| – I
D
10
1000
Common source
VDS
=
10 V
Pulse test
5
Common source
Ta
=
25°C
Pulse test
R
DS (ON)
– I
D
ïY
fs
ï
(S)
Drain-source on resistance
R
DS (ON)
(mW)
Ta
= -55°C
25°C
100°C
300
VGS
=
4.5 V
Forward transfer admittance
3
100
10 V
30
1
0.1
0.3
0.5
1
3
5
10
10
0.1
0.3
1
3
10
30
100
Drain current
I
D
(A)
Drain current
I
D
(A)
3
2002-01-17
TPC6201
R
DS (ON)
– Ta
250
Common source
200
ID
=
2.5 A, 1.2 A, 0.6 A
150
VGS
=
4.5 V
100
ID
=
2.5 A, 1.2 A, 0.6 A
50
VGS
=
10 V
0
-80
Pulse test
100
Common source
Ta
=
25°C
Pulse test
I
DR
– V
DS
Drain-source on resistance
R
DS (ON)
(mW)
Drain reverse current I
DR
(A)
30
10
10 V
3
1
5V
1V
3V
VGS
=
0 V
0.3
-40
0
40
80
120
160
0.1
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
Ambient temperature Ta
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
1000
2.8
V
th
– Ta
Common source
VDS
=
10 V
ID
=
1 mA
Pulse test
300
Gate threshold voltage V
th
(V)
2.4
(pF)
Ciss
100
Capacitance C
2
30
Coss
Crss
1.6
10
Common source
3 VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
1
0.1
0.3
1
1.2
3
10
30
100
0.8
-80
-40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Ambient temperature Ta (°C)
P
D
– Ta
1
(1)
Device mounted on a glass-epoxy
board (a) (Note 2a)
(1) Single-device operation
(Note 3a)
(2) Dual operation (per device)
(Note 3b)
Device mounted on a glass-epoxy
board (b) (Note 2b)
(3) Single-device operation
(Note 3a)
(4) Dual operation
(per device) (Note 3b)
t
=
5s
40
Dynamic input/output characteristics
12 V
Common source
ID
=
2.5 A
Ta
=
25°C
Pulse test
16
(W)
(V)
0.8
6V
30
VDS
=
24 V
P
D
V
DS
Drain power dissipation
Drain-source voltage
20
12 V
10
6V
VGS
8
0.4
(3)
(4)
4
0.2
0
0
25
50
75
100
125
150
175
200
0
0
2
4
6
8
0
10
Ambient temperature Ta (°C)
Total gate charge Q
g
(nC)
4
2002-01-17
Gate-source voltage
0.6
VDD
=
24 V
V
GS
12
(V)
(2)
TPC6201
r
th
-
t
w
1000
(4)
(3)
(2)
(1)
Transient thermal impedance
r
th
(°C/W)
300
100
30
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single device value at dual operation (Note 3b)
0.01
0.1
1
10
100
1000
10
3
Single pulse
1
0.001
Pulse t
w
(S)
Safe operating area
100
30
10
3
1
0.3
0.1
0.03
0.01
0.003
*:
Curves must be derated
linearly with increase in
temperature
0.03
0.1
0.3
1
3
Single device value at dual
operation (Note 3b)
ID max (pulse)*
1 ms*
Drain current
I
D
(A)
VDSS
max
10
30
100
0.001
0.01
Drain-source voltage
V
DS
(V)
5
2002-01-17
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