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FR12J05

Description
Rectifiers 600V 12A Fast Recovery
CategoryDiscrete semiconductor    diode   
File Size741KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FR12J05 Overview

Rectifiers 600V 12A Fast Recovery

FR12J05 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompliant
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current180 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage600 V
Maximum reverse current25 µA
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
FR12B05 thru FR12JR05
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-4 Package
V
RRM
= 100 V - 600 V
I
F
= 12 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤ 100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR12B(R)05
100
70
100
12
180
-55 to 150
-55 to 150
FR12D(R)05
200
140
200
12
180
-55 to 150
-55 to 150
FR12G(R)05
400
280
400
12
180
-55 to 150
-55 to 150
FR12J(R)05
600
420
600
12
180
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 12 A, T
j
= 25 °C
V
R
= 100 V, T
j
= 25 °C
V
R
= 100 V, T
j
= 150 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR12B(R)05
0.8
25
6
FR12D(R)05
0.8
25
6
FR12G(R)05
0.8
25
6
FR12J(R)05
0.8
25
6
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
500
500
500
500
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.0
2.0
2.0
2.0
°C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1

FR12J05 Related Products

FR12J05 FR12BR05 FR12G05 FR12DR05
Description Rectifiers 600V 12A Fast Recovery Rectifiers 100V 12A REV Leads Fast Recovery Rectifiers 400V 12A Fast Recovery Rectifiers 200V 12A REV Leads Fast Recovery
Is it lead-free? Lead free Lead free - Lead free
package instruction O-MUPM-D1 O-MUPM-D1 - O-MUPM-D1
Reach Compliance Code compliant compliant - compliant
application FAST RECOVERY FAST RECOVERY - FAST RECOVERY
Shell connection CATHODE ANODE - ANODE
Configuration SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 0.8 V 0.8 V - 0.8 V
JEDEC-95 code DO-203AA DO-203AA - DO-203AA
JESD-30 code O-MUPM-D1 O-MUPM-D1 - O-MUPM-D1
Maximum non-repetitive peak forward current 180 A 180 A - 180 A
Number of components 1 1 - 1
Phase 1 1 - 1
Number of terminals 1 1 - 1
Maximum operating temperature 150 °C 150 °C - 150 °C
Minimum operating temperature -55 °C -55 °C - -55 °C
Maximum output current 12 A 12 A - 12 A
Package body material METAL METAL - METAL
Package shape ROUND ROUND - ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT - POST/STUD MOUNT
Maximum repetitive peak reverse voltage 600 V 100 V - 200 V
Maximum reverse current 25 µA 25 µA - 25 µA
Maximum reverse recovery time 0.5 µs 0.5 µs - 0.5 µs
surface mount NO NO - NO
Terminal form SOLDER LUG SOLDER LUG - SOLDER LUG
Terminal location UPPER UPPER - UPPER
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