FR12BR05 datasheet, PDF - EEWORLD Datasheet

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FR12BR05: DescriptionRectifiers 100V 12A REV Leads Fast Recovery; CategoryDiscrete semiconductor diode; File Size741KB，4 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/

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FR12BR05 Overview

Rectifiers 100V 12A REV Leads Fast Recovery

FR12BR05 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	GeneSiC
package instruction	O-MUPM-D1
Reach Compliance Code	compliant
ECCN code	EAR99
application	FAST RECOVERY
Shell connection	ANODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V
JEDEC-95 code	DO-203AA
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	180 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	12 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	25 µA
Maximum reverse recovery time	0.5 µs
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER

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FR12B05 thru FR12JR05

Silicon Fast

Recovery Diode

Features

• High Surge Capability

• Types from 100 V to 600 V V

RRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

DO-4 Package

RRM

= 100 V - 600 V

= 12 A

Maximum ratings, at T

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Repetitive p

peak reverse

voltage

RMS reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

Operating temperature

Storage temperature

Symbol

RRM

RMS

F,SM

stg

≤ 100 °C

= 25 °C, t

= 8.3 ms

Conditions

FR12B(R)05

100

180

-55 to 150

FR12D(R)05

200

140

200

180

-55 to 150

FR12G(R)05

400

280

400

180

-55 to 150

FR12J(R)05

600

420

600

180

-55 to 150

Unit

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Diode forward voltage

Reverse current

Symbol

Conditions

= 12 A, T

= 25 °C

= 100 V, T

= 25 °C

= 100 V, T

= 150 °C

=0.5 A, I

=1.0 A,

= 0.25 A

FR12B(R)05

0.8

FR12D(R)05

0.8

FR12G(R)05

0.8

FR12J(R)05

0.8

Unit

μA

Recovery Time

Maximum reverse recovery

time

500

Thermal characteristics

Thermal resistance, junction

- case

thJC

2.0

°C/W

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/

FR12BR05 Related Products

	FR12BR05	FR12G05	FR12J05	FR12DR05
Description	Rectifiers 100V 12A REV Leads Fast Recovery	Rectifiers 400V 12A Fast Recovery	Rectifiers 600V 12A Fast Recovery	Rectifiers 200V 12A REV Leads Fast Recovery
Is it lead-free?	Lead free	-	Lead free	Lead free
package instruction	O-MUPM-D1	-	O-MUPM-D1	O-MUPM-D1
Reach Compliance Code	compliant	-	compliant	compliant
application	FAST RECOVERY	-	FAST RECOVERY	FAST RECOVERY
Shell connection	ANODE	-	CATHODE	ANODE
Configuration	SINGLE	-	SINGLE	SINGLE
Diode component materials	SILICON	-	SILICON	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V	-	0.8 V	0.8 V
JEDEC-95 code	DO-203AA	-	DO-203AA	DO-203AA
JESD-30 code	O-MUPM-D1	-	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	180 A	-	180 A	180 A
Number of components	1	-	1	1
Phase	1	-	1	1
Number of terminals	1	-	1	1
Maximum operating temperature	150 °C	-	150 °C	150 °C
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C
Maximum output current	12 A	-	12 A	12 A
Package body material	METAL	-	METAL	METAL
Package shape	ROUND	-	ROUND	ROUND
Package form	POST/STUD MOUNT	-	POST/STUD MOUNT	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	100 V	-	600 V	200 V
Maximum reverse current	25 µA	-	25 µA	25 µA
Maximum reverse recovery time	0.5 µs	-	0.5 µs	0.5 µs
surface mount	NO	-	NO	NO
Terminal form	SOLDER LUG	-	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	-	UPPER	UPPER

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