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FR12G05

Description
Rectifiers 400V 12A Fast Recovery
Categorysemiconductor    Discrete semiconductor   
File Size741KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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Rectifiers 400V 12A Fast Recovery

FR12G05 Parametric

Parameter NameAttribute value
Product CategoryRectifiers
ManufacturerGeneSiC
RoHSDetails
Mounting StyleThrough Hole
Package / CaseDO-4
Vr - Reverse Voltage400 V
If - Forward Current12 A
TypeFast Recovery Rectifiers
Vf - Forward Voltage1.4 V
Max Surge Current180 A
Ir - Reverse Current25 uA
Recovery Time500 ns
PackagingBulk
ProductRectifiers
Factory Pack Quantity5
Unit Weight0.246918 oz
FR12B05 thru FR12JR05
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-4 Package
V
RRM
= 100 V - 600 V
I
F
= 12 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤ 100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR12B(R)05
100
70
100
12
180
-55 to 150
-55 to 150
FR12D(R)05
200
140
200
12
180
-55 to 150
-55 to 150
FR12G(R)05
400
280
400
12
180
-55 to 150
-55 to 150
FR12J(R)05
600
420
600
12
180
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 12 A, T
j
= 25 °C
V
R
= 100 V, T
j
= 25 °C
V
R
= 100 V, T
j
= 150 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR12B(R)05
0.8
25
6
FR12D(R)05
0.8
25
6
FR12G(R)05
0.8
25
6
FR12J(R)05
0.8
25
6
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
500
500
500
500
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.0
2.0
2.0
2.0
°C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1

FR12G05 Related Products

FR12G05 FR12BR05 FR12J05 FR12DR05
Description Rectifiers 400V 12A Fast Recovery Rectifiers 100V 12A REV Leads Fast Recovery Rectifiers 600V 12A Fast Recovery Rectifiers 200V 12A REV Leads Fast Recovery
Is it lead-free? - Lead free Lead free Lead free
package instruction - O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Reach Compliance Code - compliant compliant compliant
application - FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection - ANODE CATHODE ANODE
Configuration - SINGLE SINGLE SINGLE
Diode component materials - SILICON SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 0.8 V 0.8 V 0.8 V
JEDEC-95 code - DO-203AA DO-203AA DO-203AA
JESD-30 code - O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current - 180 A 180 A 180 A
Number of components - 1 1 1
Phase - 1 1 1
Number of terminals - 1 1 1
Maximum operating temperature - 150 °C 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -55 °C
Maximum output current - 12 A 12 A 12 A
Package body material - METAL METAL METAL
Package shape - ROUND ROUND ROUND
Package form - POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage - 100 V 600 V 200 V
Maximum reverse current - 25 µA 25 µA 25 µA
Maximum reverse recovery time - 0.5 µs 0.5 µs 0.5 µs
surface mount - NO NO NO
Terminal form - SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location - UPPER UPPER UPPER

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