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MS2421

Description
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, M103, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size260KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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MS2421 Overview

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, M103, 2 PIN

MS2421 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1454485695
package instructionM103, 2 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionBASE
Maximum collector current (IC)22 A
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandL BAND
JESD-30 codeR-CDFM-F2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)875 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2421
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
350 W (typ.) IFF 1030 – 1090 MHz
300 W (min.) DME 1025 – 1150 MHz
290 W (typ.) TACAN 960 – 1215 MHz
960 – 1215 MHz
GOLD METALLIZATION
P
OUT
= 300W MINIMUM
G
P
= 6.3 dB MINIMUM
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
EMITTER BALLASTED
COMMON BASE
DESCRIPTION:
The MS2421 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2421 is designed
with internal input/output matching resulting in improved
broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
P
DISS
V
CES
V
CBO
V
EBO
T
J
I
C
T
STG
Power Dissipation
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Junction Temperature
Device Current
Storage Temperature
Parameter
Value
875
65
65
3.5
200
22
-65 to +200
Unit
W
V
V
V
º
C
A
º
C
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance
0.20
°
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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