TS110-8
High surge voltage 1.25 A SCR for circuit breaker
Datasheet
-
production data
Description
Thanks to highly sensitive triggering levels, the
TS110-8 series is suitable for circuit breaker
applications where the available gate current is
limited.
The 1250 V direct surge voltage capability of the
TS110-8 enables high robustness of the whole
circuit breaker. The low leakage current of the
TS110-8 reduces power consumption over the
entire lifetime of the circuit breaker. The high
off-state immunity (200 V/µs) insures the non
tripping of the breaker in case of electrical fast
transient (EFT) on the mains.
The TS110-8 is available in through-hole TO-92
package with GAK and KGA pinout and in
SMBflat-3L package.
Features
•
On-state rms current, 1.25 A
•
Repetitive peak off-state voltage, 800 V
•
Non-repetitive direct surge peak off-state
voltage, 1250 V
•
Non-repetitive reverse surge peak off-state
voltage, 900 V
•
Triggering gate current, 100 µA
•
High off-state immunity: 200 V/µs
•
ECOPACK
®
2 compliant component
Table 1. Device summary
Symbol
I
T(RMS)
V
DRM
, V
RRM
V
DSm
, V
RSM
I
GT
T
j
Value
1.25
800
1250, 900
100
125
Unit
A
V
V
µA
°C
Applications
•
GFCI (Ground Fault Circuit Interrupter)
•
AFCI (Arc Fault Circuit Interrupter)
•
RCD (Residual Current Device)
•
RCBO (Residual Current circuit Breaker with
Overload protection)
•
AFDD (Arc Fault Detection Device)
October 2014
This is information on a product in full production.
DocID026589 Rev 1
1/10
www.st.com
Characteristics
TS110-8
1
Characteristics
Table 2. Absolute ratings (limiting values)
Symbol
I
T(RMS)
Parameter
TO-92
On-state rms current (180° conduction angle)
SMBflat-3L
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
TO-92
SMBflat-3L
t
p
= 8.3 ms
t
p
= 10 ms
1st step: one surge every 5 seconds, 25 surges
2nd step: one surge every 5 seconds, 25 surges
t
p
= 10 ms
T
l
= 53 °C
T
c
= 109 °C
T
I
= 53 °C
T
c
= 109 °C
Value
1.25
Unit
A
IT
(AV)
0.8
21
A
T
j initial
= 25 °C
T
amb
= 90 °C
I
TSM
20
25 times 12 A
25 times 16 A
2
100
A
I
²
t
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
t
p
= 10 ms, 25 °C
F = 50 Hz, 125 °C
A
2
S
dI/dt
A/µs
200
800
1250
900
1.2
0.2
- 40 to + 150
°C
- 40 to + 125
V
V
V
A
W
Non repetitive critical current rate of rise at break-over, see
Figure 17,
V
D
> V
DSm
V
DRM
,
V
RRM
V
DSm
V
RSM
I
GM
P
G(AV)
T
stg
T
j
Repetitive peak off-state AC voltage, R
GK
= 220
Ω
Non-repetitive direct surge peak off-state voltage,
R
GK
= 220
Ω
Non-repetitive reverse surge peak off-state
voltage, R
GK
= 220
Ω
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 10 ms
t
p
= 10 ms
t
p
= 20 µs
T
j
= 125 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
Table 3. Electrical characteristics
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
D
= V
DRM
, R
L
= 33 kΩ, R
GK
= 220
Ω
I
RG
= 2 mA
I
T
= 50 mA, R
GK
= 220
Ω
I
G
= 5 mA, R
GK
= 220
Ω
V
D
= 67% V
DRM,
R
GK
= 220
Ω
T
j
= 125 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
Test conditions
Min.
V
D
= 12 V, R
L
= 140Ω
T
j
= 25 °C
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Value
1
µA
100
0.8
0.1
7.5
12
12
200
V
V
V
mA
mA
V/µs
Unit
2/10
DocID026589 Rev 1
TS110-8
Table 4. Static electrical characteristics
Symbol
V
TM
V
T0
R
D
I
DRM
I
RRM
I
TM
= 2.5 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
DRM
/ V
RRM
, R
GK
= 220
Ω
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Max.
Max.
Max.
Max.
Characteristics
Value
1.6
0.95
220
1
100
Unit
V
V
mΩ
µA
µA
Table 5. Thermal resistance
Symbol
R
th(j-l)
R
th(j-a)
R
th(j-c)
Junction to leads (DC)
Junction to ambient (DC)
Junction to case (DC)
Parameter
TO-92
TO-92
S = 5 cm
2
SMBflat-3L
SMBflat-3L
Value
65
160
°C/W
75
14
Unit
Figure 1. Maximum average power dissipation
versus average on-state current
Figure 2. Average and DC on-state current
versus lead temperature (TO-92)
Figure 3. Average and DC on-state current
versus case temperature (SMBflat-3L)
I
T(AV)
(A)
1.4
SMBflat-3L
Figure 4. Average and DC on-state current
versus ambient temperature
a
= 30°, 60°, 90°, 120°, 180°, DC
1.2
1.0
0.8
0.6
0.4
0.2
T
c
(°C)
0.0
0
25
50
75
100
125
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10
Characteristics
TS110-8
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
Figure 6. Typical thermal resistance junction to
ambient versus copper surface under anode
(epoxy FR4, Cu
th
= 35 µm)
SMBflat-3L
Copper surface
area = 5cm²
0.10
T
p
(s)
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 7. Relative variation of gate trigger
current and trigger voltage versus junction
temperature (typical values)
Figure 8. Relative variation of latching and
holding current versus junction temperature
(typical values)
Figure 9. Relative variation of holding current Figure 10. Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values) versus junction temperature (typical values)
2.5
I
H
[RGK] / I
H
[RGK = 220
Ω
]
10
9
dV/d
t
[T
j
] / dV/d
t
[T
j
= 125°C]
V
D = 0.67 X
V
DRM
R
GK = 220
Ω
2.0
8
7
1.5
6
5
1.0
4
3
0.5
2
R
GK
(K
Ω
)
0.0
1.E-01
1.E+00
1.E+01
1
0
20
40
60
Tj (°C)
80
100
120
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DocID026589 Rev 1
TS110-8
Characteristics
Figure 11. Relative variation of dV/dt immunity Figure 12. Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values) versus gate-cathode capacitor (typical values)
10.00
dV/d
t
[
R
GK
]
/ dV/d
t
[R
GK
= 220
Ω
]
V
D = 0.67 X
V
DRM
T
j = 125 °C
5.0
4.5
4.0
3.5
3.0
dV/d
t
[
C
GK
]
/ dV/d
t
[C
GK
= 100
pF
]
V
D = 0.67 X
V
DRM
T
j = 125 °C
R
GK
= 220
Ω
1.00
2.5
2.0
1.5
1.0
RGK (
Ω
)
0.10
100
200
300
400
500
600
700
0.5
0.0
0.0
0.5
C
GK
(
nF
)
1.0
1.5
2.0
Figure 13. On-state characteristics (maximum
values)
100.0
Figure 14. Surge peak on-state current versus
number of cycles
I
TM
(
A
)
10.0
Tj = 125 °C
1.0
Tj = 25 °C
V
TM
(
V
)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T
j = 125 °C
V
to
= 0
.95 V
R
d
= 220 m
Ω
4.0
4.5
5.0
Figure 15. Non repetitive surge peak on-state current
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