Not Recommended for New Design
Please Use ZXMN3A01E6TA
ZXM62N03E6
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=30V; R
DS(ON)
=0.11 ; I
D
=3.2A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXM62N03E6TA
ZXM62N03E6TC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
Top View
3000 units
10000 units
DEVICE MARKING
•
2N03
ISSUE 1 - JUNE 2004
1
Not Recommended for New Design
Please Use ZXMN3A01E6TA
ZXM62N03E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)
(V
GS
=10V; T
A
=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
LIMIT
30
20
3.2
2.6
18
2.1
18
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
ISSUE 1 - JUNE 2004
2
Not Recommended for New Design
Please Use ZXMN3A01E6TA
ZXM62N03E
6
ISSUE 1 - JUNE 2004
3
Not Recommended for New Design
Please Use ZXMN3A01E6TA
ZXM62N03E6
ELECTRICAL CHARACTERISTICS
(at Tamb = 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
18.8
11.4
0.95
V
ns
nC
T
j
=25°C, I
S
=2.2A,
V
GS
=0V
T
j
=25°C, I
F
=2.2A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.9
5.6
11.7
6.4
9.6
1.7
2.8
ns
ns
ns
ns
nC
nC
nC
V
DS
=24V,V
GS
=10V,
I
D
=2.2A (refer to
test circuit)
V
DD
=15V, I
D
=2.2A
R
G
=6.0Ω, R
D
=6.7Ω
(refer to test
circuit)
C
iss
C
oss
C
rss
380
90
30
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
1.1
1.0
0.11
0.15
30
1
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=⎛ 20V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
V
GS
=10V, I
D
=2.2A
V
GS
=4.5V, I
D
=1.1A
V
DS
=10V,I
D
=1.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
®2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
Not Recommended for New Design
Please Use ZXMN3A01E6TA
ZXM62N03E6
ISSUE 1 - JUNE 2004
5
京公网安备 11010802033920号
EEWORLD
