Super323™
SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
ZUMT617
*
*
*
*
*
500mW POWER DISSIPATION
I
C
CONT 1.5A
5A Peak Pulse Current
Excellent H
FE
Characteristics Up To 5A (pulsed)
Extremely Low Equivalent On Resistance;
R
CE(sat)
APPLICATIONS
*
DC-DC converter boost functions
*
Motor drive functions
DEVICE TYPE
ZUMT617
COMPLEMENT
ZUMT717
PARTMARKING
T61
R
CE(sat)
135mΩ at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
VALUE
15
15
5
5
1.5
200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
Operating and Storage Temperature T
j
:T
stg
Range
°C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT617
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
16.5
40
75
150
205
930
865
200
300
250
200
75
30
420
450
390
300
150
75
180
15
50
250
MHz
pF
ns
ns
MIN.
15
15
5
10
10
10
20
55
100
200
245
1100
1100
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
= 100µA
I
C
= 10mA*
I
E
= 100µA
V
CB
= 10V
V
EB
= 4V
V
CES
= 10V
I
C
= 100mA, I
B
=10mA*
I
C
= 250mA, I
B
= 10mA*
I
C
= 500mA, I
B
=10mA*
I
C
= 1A, I
B
=10mA*
I
C
= 1.5A, I
B
=20mA*
I
C
= 1.5A, I
B
=20mA*
I
C
= 1.5A, V
CE
= 2V*
I
C
= 10mA, V
CE
= 2V*
I
C
= 100mA, V
CE
= 2V*
I
C
= 500mA, V
CE
=2V*
I
C
= 1A, V
CE
=2 V*
I
C
= 3A, V
CE
=2V*
I
C
=5A, V
CE
= 2V*
I
C
= 50mA, V
CE
= 10V
f= 100MHz
V
CB
= 10V, f=1MHz
V
CC
= 10V, I
C
= 1A
I
B1
=I
B2
=100mA
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Embedded System
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