(130 ns), the DG308A is supplied in the “normally open”
configuration while DG309 is supplied “normally closed”.
Input thresholds are high voltage CMOS compatible.
Designed with the Vishay Siliconix PLUS-40 CMOS process
to combine low power dissipation with a high breakdown
voltage rating of 44 V, each switch conducts equally well in
both directions when on, and blocks up to the supply voltage
when off. An epitaxial layer prevents latch up.
The DG308B, DG309B upgrades are recommended for new
designs.
FEATURES
• ± 15 V analog input range
• Low on-resistance: 60
• Fast switching: 130 ns
• Low power dissipation: 30 nW
•
CMOS logic compatible
BENEFITS
• Full rail-to-rail analog signal range
• Low signal error
• Wide dynamic range
• Single or dual supply capability
• Static protected logic inputs
• Space savings (TSSOP)
APPLICATIONS
• Portable and battery powered instrumentation
• Communication systems
• Computer peripherals
• High-speed multiplexing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG308A
IN
1
D
1
S
1
V–
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
NC
S
3
D
3
IN
3
For SPST Switches per Package
TRUTH TABLE
Logic
0
1
Logic “0”
3.5
V
Logic “1”
11
V
DG308A
OFF
ON
DG309
ON
OFF
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70046
S11-0303-Rev. G, 28-Feb-11
www.vishay.com
1
DG308A, DG309
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
0 °C to 70 °C
Package
16-Pin Plastic DIP
Part Number
DG308ACJ
DG308ACJ-E3
DG309CJ
DG309CJ-E3
DG308ADY
DG308ADY-E3
DG308ADY-T1
DG308ADY-T1-E3
DG309DY
DG309DY-E3
DG309DY-T1
DG309DY-T1-E3
DG308ADQ
DG308ADQ-E3
DG308ADQ-T1
DG308ADQ-T1-E3
DG309DQ
DG309DQ-E3
DG309DQ-T1
DG309DQ-T1-E3
16-Pin Narrow SOIC
- 40 °C to 85 °C
16-Pin TSSOP
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced V+ to V-
GND
Digital Inputs
a
, V
S
, V
D
Current, Any Terminal Except S or D
Continuous Current
Storage Temperature
S or D
(Pulsed at 1 ms, 10 % duty cycle max.)
(AK Suffix)
(CJ, DY and DQ Suffix)
16-Pin Plastic DIP
c
Power Dissipation
b
Limit
44
25
(V-) - 2 to (V+) + 2 or
20 mA, whichever occurs first
30
20
70
- 65 to 150
- 65 to 125
470
e
Unit
V
mA
°C
16-Pin Narrow SOIC and TSSOP
16-Pin CerDIP
d
600
900
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 12 mW/°C above 75 °C.
d. Derate 6.5 mW/°C above 25 °C.
e. Derate 7.6 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 70046
S11-0303-Rev. G, 28-Feb-11
DG308A, DG309
Vishay Siliconix
SCHEMATIC DIAGRAM
(Typical Channel)
V+
S
V-
V
IN
Level
Shift/
Drive
V+
GND
D
V-
Figure 1.
SPECIFICATIONS
a
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
IN
= 3.5 V or 11 V
f
A Suffix
- 55 °C to 125°C
Temp.
b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Typ.
c
Min.
d
- 15
60
Max.
d
15
100
150
1
100
1
100
1
100
C, D Suffix
Min.
d
- 15
Max.
d
Unit
15
100
125
5
100
5
100
5
200
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Input Current with
Input Voltage High
Input Current with
Input Voltage Low
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off-Isolation
f
Symbol
V
ANALOG
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
D
=
±
10 V, I
S
= 1 mA
V
S
=
±
14 V, V
D
=
±
14 V
V
D
=
±
14 V, V
S
=
±
14 V
V
D
= V
S
=
±
14 V
±
0.1
±
0.1
±
0.1
-1
100
-1
100
-1
100
-5
- 100
-5
- 100
-5
- 200
nA
I
INH
I
INL
C
IN
t
ON
t
OFF
Q
C
S(off)
C
D(off)
C
D(on)
OIRR
V
IN
= 15 V
V
IN
= 0 V
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
0.001
- 0.001
8
130
90
- 10
11
8
27
78
-1
1
-1
1
µA
pF
see figure 2
C
L
= 0.01 µF, R
gen
= 0
V
gen
= 0 V,
f = 140 kHz, V
S
, V
D
= 0 V
R
L
= 75
,
V
S
= 2 V
p-p
, f = 500 kHz
200
150
200
150
ns
pC
pF
dB
Document Number: 70046
S11-0303-Rev. G, 28-Feb-11
www.vishay.com
3
DG308A, DG309
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
IN
= 3.5 V or 11 V
f
A Suffix
- 55 °C to 125°C
Temp.
b
Room
Full
Room
Full
Typ.
c
0.001
- 0.001
- 10
- 100
Min.
d
Max.
d
10
100
- 100
C, D Suffix
Min.
d
Max.
d
Unit
10
100
Parameter
Power Supplies
Positive Supply Current
Negative Supply Current
Symbol
I+
I-
all channels on or off
V
IN
= 0 V or 15 V
µA
Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
R
DS(on)
- Drain-Source On-Resistance ()
150
T
A
= 25 °C
±5V
800
120
600
I+, I- (µA)
90
± 7.5 V
± 10 V
60
± 15 V
30
± 20 V
200
± 15 V Supplies
T
A
= 25 °C
400
I-
I+
0
- 20
100
- 15
- 10
-5
5
0
10
V
D
- Drain Voltage (V)
15
20
1k
10 k
100 k
1M
f - Frequency (Hz)
R
DS(on)
vs. V
D
and Power Supply
20
Supply Currents vs. Switching Frequency (All Inputs Active)
250
R
DS(on)
- Drain-Source On-Resistance ()
T
A
= 25 °C
10
I
S(off)
0
I
S
, I
D
(pA)
I
D(off)
- 10
I
D(on)
V+ = + 7.5 V
200
T
A
= 25 °C
V- = 0 V
150
+ 10 V
100
+ 15 V
- 20
50
+ 20 V
- 30
- 15 - 12 - 9 - 6 - 3
0
3
6
9
12
V
D
or V
S
- Drain or Source Voltage (V)
15
0
0
5
10
V
D
- Drain Voltage (V)
15
20
Leakage Currents vs. Analog Voltage
www.vishay.com
4
R
DS(on)
vs. V
D
and Power Supply Voltage
Document Number: 70046
S11-0303-Rev. G, 28-Feb-11
DG308A, DG309
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
T
A
= 25 °C
7
8
6
6
V
T
(V)
V
T
(V)
5
4
3
2
1
0
0
±5
± 10
± 15
± 20
V+, V- Positive and Negative Supplies (V)
0
0
5
10
15
8
V- = 0 V
T
A
= 25 °C
4
2
Input Switching Threshold
vs. V+ and V- Supply Voltages
V+ - Positive Supply Voltage (V)
Input Switching Threshold vs. Positive
Supply Voltage
+ 15 V
V+
V
S
= + 3 V
S
IN
12 V
GND
V-
R
L
1 k
C
L
35 pF
Switch
Output
- 15 V
V
O
= V
S
R
L
R
L
+ R
DS(on)
V
O
t
ON
90 %
D
V
O
Logic
Input
12 V
50 %
0V
t
OFF
t
r
< 20 ns
t
f
< 20 ns
Figure 2. Switching Time
APPLICATIONS
Single Supply Operation
The DG308A and DG309 will switch positive analog signals
while using a single positive supply. This will allow use in
many applications where only one supply is available. The
trade-offs or performance given up while using single
supplies are:
1) increased R
DS(on)
and 2) slower switching speed. As
stated in the absolute maximum ratings section of the data
sheet, the analog voltage should not go above or below the
supply voltages which in single supply operation are V+ and
0 V.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
京公网安备 11010802033920号
EEWORLD
