2N3117 datasheet, PDF - EEWORLD Datasheet

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2N3117: DescriptionARM Microcontrollers - MCU; CategoryDiscrete semiconductor The transistor; File Size602KB，3 Pages; ManufacturerCentral Semiconductor

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2N3117 Overview

ARM Microcontrollers - MCU

2N3117 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	250
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Base Number Matches	1

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2N3117

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3117 type is an

NPN silicon transistor designed for general purpose

amplifier applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

hFE

hfe

Cob

Cib

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

6.0

360

-65 to +200

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=45V

VCB=45V, TA=150°C

VEB=5.0V

IC=10μA

IC=10mA

IE=10μA

IC=1.0mA, IB=100μA

VCE=5.0V, IC=100μA

VCE=5.0V, IC=1.0μA

VCE=5.0V, IC=10μA

VCE=5.0V, IC=10μA, TA=-55°C

VCE=5.0V, IC=100μA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=0.5mA, f=30MHz

VCB=5.0V, IE=0

VEB=0.5V, IC=0

VCE=5.0V, IC=5.0μA, f=10kHz

BW=1.0kHz, RS=50kΩ

100

250

300

400

2.0

6.0

MAX

UNITS

μA

0.35

0.7

500

4.5

6.0

1.0

R0 (4-September 2012)

2N3117 Related Products

	2N3117	2N3117-LEADFREE
Description	ARM Microcontrollers - MCU	Bipolar Transistors - BJT NPN Low Lv1 SS sistors
Configuration	SINGLE	Single

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