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2N3117-LEADFREE

Description
Bipolar Transistors - BJT NPN Low Lv1 SS sistors
Categorysemiconductor    Discrete semiconductor   
File Size602KB,3 Pages
ManufacturerCentral Semiconductor
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2N3117-LEADFREE Overview

Bipolar Transistors - BJT NPN Low Lv1 SS sistors

2N3117-LEADFREE Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerCentral Semiconductor
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-18-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max60 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.35 V
Gain Bandwidth Product fT60 MHz
DC Collector/Base Gain hfe Min250
DC Current Gain hFE Max500
Height5.33 mm
Length5.84 mm
PackagingBox
Factory Pack Quantity2000
Width5.84 mm
2N3117
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3117 type is an
NPN silicon transistor designed for general purpose
amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
hfe
Cob
Cib
NF
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
UNITS
V
V
V
mA
mW
°C
60
60
6.0
50
360
-65 to +200
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=45V
VCB=45V, TA=150°C
VEB=5.0V
IC=10μA
IC=10mA
IE=10μA
IC=1.0mA, IB=100μA
VCE=5.0V, IC=100μA
VCE=5.0V, IC=1.0μA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=10μA, TA=-55°C
VCE=5.0V, IC=100μA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=0.5mA, f=30MHz
VCB=5.0V, IE=0
VEB=0.5V, IC=0
VCE=5.0V, IC=5.0μA, f=10kHz
BW=1.0kHz, RS=50kΩ
100
250
50
300
400
2.0
60
60
6.0
MAX
10
10
10
UNITS
nA
μA
nA
V
V
V
0.35
0.7
500
V
V
4.5
6.0
1.0
pF
pF
dB
R0 (4-September 2012)

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