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IPB45N06S4-09

Description
MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2
Categorysemiconductor    Discrete semiconductor   
File Size152KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPB45N06S4-09 Overview

MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2

IPB45N06S4-09 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current45 A
Rds On - Drain-Source Resistance7.6 mOhms
Vgs th - Gate-Source Threshold Voltage2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge47 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
QualificationAEC-Q100
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time5 ns
Height4.4 mm
Length10 mm
Pd - Power Dissipation71 W
Rise Time40 ns
Factory Pack Quantity1000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time15 ns
Width9.25 mm
Unit Weight0.139332 oz
IPB45N06S4-09
IPI45N06S4-09, IPP45N06S4-09
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
60
9.2
45
V
mΩ
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
IPB45N06S4-09
IPI45N06S4-09
IPP45N06S4-09
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0609
4N0609
4N0609
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25°C
I
D
=22.5A
-
-
T
C
=25°C
-
-
Value
45
45
180
97
45
±20
71
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2009-03-24

IPB45N06S4-09 Related Products

IPB45N06S4-09 IPP45N06S4-09 IPI45N06S409AKSA2 IPP45N06S409AKSA2
Description MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2 USB Connectors R/A USB B-Type RBI 30U MOSFET N-CH 60V 45A TO262-3 MOSFET N-CH 60V 45A TO220-3
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Is it lead-free? - Contains lead Lead free Lead free
Is it Rohs certified? - conform to conform to conform to
package instruction - GREEN, PLASTIC, TO-220, 3 PIN IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code - compliant not_compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) - 97 mJ 97 mJ 97 mJ
Minimum drain-source breakdown voltage - 60 V 60 V 60 V
Maximum drain current (ID) - 45 A 45 A 45 A
Maximum drain-source on-resistance - 0.0094 Ω 0.0094 Ω 0.0094 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-220AB TO-262AA TO-220AB
JESD-30 code - R-PSFM-T3 R-PSIP-T3 R-PSFM-T3
JESD-609 code - e3 e3 e3
Number of components - 1 1 1
Number of terminals - 3 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 180 A 180 A 180 A
surface mount - NO NO NO
Terminal surface - Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials - SILICON SILICON SILICON
Base Number Matches - 1 1 1
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