IPB45N06S4-09
IPI45N06S4-09, IPP45N06S4-09
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
60
9.2
45
V
mΩ
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
IPB45N06S4-09
IPI45N06S4-09
IPP45N06S4-09
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0609
4N0609
4N0609
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25°C
I
D
=22.5A
-
-
T
C
=25°C
-
-
Value
45
45
180
97
45
±20
71
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2009-03-24
IPB45N06S4-09
IPI45N06S4-09, IPP45N06S4-09
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=34µA
V
DS
=60V,
V
GS
=0V,
T
j
=25°C
V
DS
=60V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
V
GS
=10 V,
I
D
=45 A
V
GS
=10V,
I
D
=45A,
SMD version
60
2.0
-
-
3.0
0.01
-
4.0
1
µA
V
-
-
-
-
-
-
-
-
2.1
62
62
40
K/W
Values
typ.
max.
Unit
-
-
-
-
5
-
7.9
7.6
100
100
9.4
9.1
nA
mΩ
Rev. 1.0
page 2
2009-03-24
IPB45N06S4-09
IPI45N06S4-09, IPP45N06S4-09
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25°C
V
GS
=0V,
I
F
=45A,
T
j
=25°C
V
R
=30V,
I
F
=I
S
,
di
F
/dt =100A/µs
-
-
0.6
-
-
0.95
45
180
1.3
V
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=48V,
I
D
=45A,
V
GS
=0 to 10V
-
-
-
-
17
4
36
5.6
22
8
47
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30V,
V
GS
=10V,
I
D
=45A,
R
G
=3.5Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
2911
715
30
15
40
20
5
3785
930
60
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
2)
t
rr
-
45
-
ns
Reverse recovery charge
2)
1)
Q
rr
-
40
-
nC
Current is limited by bondwire; with an
R
thJC
= 2.1K/W the chip is able to carry 66A at 25°C.
Defined by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24
IPB45N06S4-09
IPI45N06S4-09, IPP45N06S4-09
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V; SMD
80
70
50
40
60
50
30
P
tot
[W]
40
30
20
I
D
[A]
20
10
0
0
50
100
150
200
0
50
100
150
200
10
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
0.5
10
0
0.1
100
10 µs
I
D
[A]
100 µs
Z
thJC
[K/W]
0.05
10
-1
0.01
1 ms
10
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2009-03-24
IPB45N06S4-09
IPI45N06S4-09, IPP45N06S4-09
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
180
10 V
8V
7.5 V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
20
5.5 V
6V
6.5 V
7V
7.5 V
150
7V
18
16
120
R
DS(on)
[mΩ]
I
D
[A]
6.5 V
14
90
12
60
6V
10
5.5 V
30
8
10 V
0
0
1
2
3
4
6
0
40
80
120
160
200
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
200
-55 °C
25 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 45 A;
V
GS
= 10 V; SMD
14
160
12
175 °C
R
DS(on)
[m
Ω
]
3
4
5
6
7
8
120
10
I
D
[A]
80
8
40
6
0
4
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2009-03-24
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