2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
2N7000
2N7002
VQ1000J
VQ1000P
BS170
60
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
5 @ V
GS
= 10 V
7.5 @ V
GS
= 10 V
5.5 @ V
GS
= 10 V
5.5 @ V
GS
= 10 V
5 @ V
GS
= 10 V
V
GS(th)
(V)
0.8 to 3
1 to 2.5
0.8 to 2.5
0.8 to 2.5
0.8 to 3
I
D
(A)
0.2
0.115
0.225
0.225
0.5
FEATURES
D
D
D
D
D
Low On-Resistance: 2.5
W
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-226AA
(TO-92)
S
1
G
G
2
S
D
3
2
1
TO-236
(SOT-23)
3
D
Top View
Top View
2N7000
Marking Code: 72wll
72 = Part Number Code for 2N7002
w
= Week Code
ll
= Lot Traceability
Dual-In-Line
D
1
N
S
1
G
1
NC
G
2
N
S
2
D
2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
D
4
S
4
G
4
NC
G
3
G
S
3
D
3
N
S
3
2
D
1
N
TO-92-18RM
(TO-18 Lead Form)
Top View
Plastic: VQ1000J
Sidebraze: VQ1000P
Top View
BS170
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-1
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Single
Parameter
Drain-Source Voltage
Gate-Source Voltage—Non-Repetitive
Gate-Source Voltage—Continuous
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain
Current
a
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Total Quad
VQ1000J/P
BS170
60
"25
"20
0.225
0.14
1
1.3
0.52
96
2
0.8
62.5
156
0.83
W
_C/W
_C
"20
0.5
0.175
A
V
Symbol
V
DS
V
GSM
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
2N7000
60
"40
"20
0.2
0.13
0.5
0.4
0.16
312.5
2N7002
60
"40
"20
0.115
0.073
0.8
0.2
0.08
625
VQ1000J
60
"30
"20
0.225
0.14
1
1.3
0.52
96
VQ1000P
60
Unit
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. t
p
v
50
ms.
SPECIFICATIONS 2N7000 AND 2N7002 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Symbol
Test Conditions
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 0.25 mA
V
DS
= 0 V, V
GS
=
"15
V
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 48 V, V
GS
= 0 V
Typ
a
Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
I
GSS
70
2.1
2.0
60
0.8
3
60
V
1
"10
"100
1
1000
1
500
mA
m
2.5
nA
Gate-Body Leakage
Zero Gate Voltage Drain Current
I
DSS
T
C
= 125_C
V
DS
= 60 V, V
GS
= 0 V
T
C
= 125_C
V
DS
= 10 V, V
GS
= 4.5 V
V
DS
= 7.5 V, V
GS
= 10 V
V
GS
= 4.5 V, I
D
= 0.075 A
V
GS
= 5 V, I
D
= 0.05 A
0.35
1
4.5
3.2
5.8
2.4
4.4
100
0.5
0.075
On-State Drain Current
b
I
D(on)
0.5
5.3
7.5
13.5
5
9
80
7.5
13.5
A
Drain-Source On-Resistance
b
r
DS(on)
T
C
= 125_C
V
GS
= 10 V, I
D
= 0.5 A
T
J
= 125_C
W
Forward Transconductance
b
Common Source Output Conductance
b
g
fs
g
os
V
DS
= 10 V, I
D
= 0.2 A
V
DS
= 5 V, I
D
= 0.05 A
mS
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
22
11
2
60
25
5
50
25
5
pF
www.vishay.com
11-2
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
SPECIFICATIONS 2N7000 AND 2N7002 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Parameter
Switching
d
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
t
ON
t
OFF
t
ON
t
OFF
V
DD
= 15 V, R
L
= 25
W
I
D
^0.5
A, V
GEN
= 10 V, R
G
= 25
W
V
DD
= 30 V, R
L
= 150
W
I
D
^
0.2 A, V
GEN
= 10 V, R
G
= 25
W
7
7
7
11
10
10
20
20
ns
SPECIFICATIONS VQ1000J/P AND BS170 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P
BS170
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Symbol
Test Conditions
V
GS
= 0 V, I
D
= 100
mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
"10
V
T
J
= 125_C
V
DS
= 0 V, V
GS
=
"15
V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 10 V, V
GS
= 10 V
V
GS
= 5 V, I
D
= 0.2 A
V
GS
= 10 V, I
D
= 0.2 A
V
GS
= 10 V, I
D
= 0.3 A
T
J
= 125_C
V
DS
= 10 V, I
D
= 0.2 A
V
DS
= 10 V, I
D
= 0.5 A
V
DS
=5 V, I
D
= 0.05 A
Typ
a
Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
70
2.1
60
0.8
2.5
"100
"500
60
0.8
3
V
Gate-Body Leakage
I
GSS
nA
"10
0.5
Zero Gate Voltage Drain Current
Current
b
I
DSS
I
D(on)
500
10
1
4
2.3
2.3
4.2
5.5
7.6
100
100
0.5
0.5
7.5
5
m
mA
A
On-State Drain
Drain-Source On-Resistance
b
r
DS(on)
W
Forward Transconductance
b
Common Source Output
Conductance
b
g
fs
g
os
mS
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
=25 V, V
GS
= 0 V
f = 1 MHz
22
11
2
60
25
5
60
pF
Switching
d
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
t
ON
t
OFF
t
ON
t
OFF
V
DD
= 15 V, R
L
= 23
W
I
D
^
0.6 A, V
GEN
= 10 V, R
G
= 25
W
V
DD
= 25 V, R
L
= 125
W
I
D
^
0.2 A, V
GEN
= 10 V, R
G
= 25
W
7
7
7
7
10
10
10
10
ns
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
v80
ms
duty cycle
v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
VNBF06
www.vishay.com
11-3
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
1.0
V
GS
= 10, 9, 8, 7 V
0.8
I
D
– Drain Current (A)
6.5 V
6V
I
D
– Drain Current (A)
5.5 V
0.6
5V
0.4
4.5 V
4V
3.5 V
3V
0.0
0
1
2
3
4
5
0.8
T
J
= –55_C
25_C
0.6
125_C
0.4
1.0
Transfer Characteristics
0.2
0.2
2.5 V
2, 1 V
6
0.0
0
1
2
3
4
5
6
7
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
7
6
r
DS(on)
– On-Resistance (
Ω )
r
DS
@ 5 V = V
GS
5
4
3
2
1
0
0.0
r
DS
@ 10 V = V
GS
C – Capacitance (pF)
40
60
V
GS
= 0 V
f = 1 MHz
50
Capacitance
30
C
iss
20
C
oss
10
C
rss
0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
25
30
35
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
20
I
D
= 0.5 A
V
GS
– Gate-to-Source Voltage (V)
16
Gate Charge
2.0
On-Resistance vs. Junction Temperature
r
DS(on)
– On-Resistance (
Ω )
(Normalized)
V
GS
= 10 V, r
DS
@ 0.5 A
1.5
12
V
DS
= 30 V
8
1.0
V
GS
= 5 V, r
DS
@ 0.05 A
0.5
4
0
0
400
800
1200
1600
2000
2400
0.0
–55
–30
–5
20
45
70
95
120
145
Q
g
– Total Gate Charge (pC)
T
J
– Junction Temperature (_C)
www.vishay.com
11-4
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
1.000
6
On-Resistance vs. Gate-to-Source Voltage
5
T
J
= 125_C
I
S
– Source Current (A)
0.100
r
DS(on)
– On-Resistance (
Ω )
I
D
= 50 mA
4
500 mA
3
T
J
= 25_C
0.010
2
1
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
12
14
16
18
20
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.50
I
D
= 250
mA
0.25
V
GS(th)
– Variance (V)
–0.00
–0.25
–0.50
–0.75
–50
–25
0
25
50
75
100
125
150
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
P
DM
0.01
Single Pulse
0.01
0.1
1
10
100
2. Per Unit Base = R
thJA
= 156_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-5
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